Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film

Ajay Kumar Baranwal; Shrikant Saini; Zhen Wang; Kengo Hamada; Daisuke Hirotani; Kohei Nishimura; Muhammad Akmal Kamarudin; Gaurav Kapil; Tomohide Yabuki; Satoshi Iikubo; Qing Shen; Koji Miyazaki; Shuzi Hayase

doi:10.1007/s11664-019-07846-8

Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI₃ Thin Film

Ajay Kumar Baranwal, Shrikant Saini, Zhen Wang, Kengo Hamada, Daisuke Hirotani, Kohei Nishimura, Muhammad Akmal Kamarudin, Gaurav Kapil, Tomohide Yabuki, Satoshi Iikubo, Qing Shen, Koji Miyazaki, Shuzi Hayase

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Inorganic CsSnI₃ based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI₃ thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn⁴⁺ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn⁴⁺ concentrations, we report a power factor of 145.10 μW m⁻¹ K⁻² , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.

Original language	English
Pages (from-to)	2698-2703
Number of pages	6
Journal	Journal of Electronic Materials
Volume	49
Issue number	5
DOIs	https://doi.org/10.1007/s11664-019-07846-8
Publication status	Published - May 1 2020
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-019-07846-8

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@article{d392a194daf043038e0286d211a9d4b6,

title = "Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film",

abstract = "Inorganic CsSnI3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI3 thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn4+ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn4+ concentrations, we report a power factor of 145.10 μW m−1 K−2 , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.",

author = "Baranwal, {Ajay Kumar} and Shrikant Saini and Zhen Wang and Kengo Hamada and Daisuke Hirotani and Kohei Nishimura and Kamarudin, {Muhammad Akmal} and Gaurav Kapil and Tomohide Yabuki and Satoshi Iikubo and Qing Shen and Koji Miyazaki and Shuzi Hayase",

note = "Publisher Copyright: {\textcopyright} 2019, The Minerals, Metals & Materials Society.",

year = "2020",

month = may,

day = "1",

doi = "10.1007/s11664-019-07846-8",

language = "English",

volume = "49",

pages = "2698--2703",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film

AU - Baranwal, Ajay Kumar

AU - Saini, Shrikant

AU - Wang, Zhen

AU - Hamada, Kengo

AU - Hirotani, Daisuke

AU - Nishimura, Kohei

AU - Kamarudin, Muhammad Akmal

AU - Kapil, Gaurav

AU - Yabuki, Tomohide

AU - Iikubo, Satoshi

AU - Shen, Qing

AU - Miyazaki, Koji

AU - Hayase, Shuzi

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Inorganic CsSnI3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI3 thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn4+ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn4+ concentrations, we report a power factor of 145.10 μW m−1 K−2 , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.

AB - Inorganic CsSnI3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI3 thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn4+ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn4+ concentrations, we report a power factor of 145.10 μW m−1 K−2 , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=85075917633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075917633&partnerID=8YFLogxK

U2 - 10.1007/s11664-019-07846-8

DO - 10.1007/s11664-019-07846-8

M3 - Article

AN - SCOPUS:85075917633

SN - 0361-5235

VL - 49

SP - 2698

EP - 2703

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI₃ Thin Film

Abstract

All Science Journal Classification (ASJC) codes

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