Effect of oxygen pressure on electrical properties of BiFe 0.9Co0.1O3 thin films prepared by pulsed laser deposition

Hajime Hojo; Ko Onuma; Yuichi Ikuhara; Masaki Azuma

doi:10.7567/JJAP.52.09KD09

Effect of oxygen pressure on electrical properties of BiFe _0.9Co_0.1O₃ thin films prepared by pulsed laser deposition

Hajime Hojo, Ko Onuma, Yuichi Ikuhara, Masaki Azuma

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The crystal structures and electrical properties of epitaxial BiFe _0.9Co_0.1O₃ thin films grown by pulsed laser deposition on SrRuO₃/SrTiO₃(001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe _0.9Co_0.1O₃ thin films monotonically decreases with increasing oxygen pressure from 10 to 17 Pa, while the leakage current is minimum at 15 Pa. Oxygen content variation in the BiFe_0.9Co _0.1O₃ thin films is proposed to explain the obtained experimental results. The BiFe_0.9Co_0.1O₃ thin film deposited at 15 Pa shows ferroelectric switching behavior with inversion current at room temperature.

Original language	English
Article number	09KD09
Journal	Japanese journal of applied physics
Volume	52
Issue number	9 PART2
DOIs	https://doi.org/10.7567/JJAP.52.09KD09
Publication status	Published - Sept 1 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Effect of oxygen pressure on electrical properties of BiFe 0.9Co0.1O3 thin films prepared by pulsed laser deposition",

abstract = "The crystal structures and electrical properties of epitaxial BiFe 0.9Co0.1O3 thin films grown by pulsed laser deposition on SrRuO3/SrTiO3(001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe 0.9Co0.1O3 thin films monotonically decreases with increasing oxygen pressure from 10 to 17 Pa, while the leakage current is minimum at 15 Pa. Oxygen content variation in the BiFe0.9Co 0.1O3 thin films is proposed to explain the obtained experimental results. The BiFe0.9Co0.1O3 thin film deposited at 15 Pa shows ferroelectric switching behavior with inversion current at room temperature.",

author = "Hajime Hojo and Ko Onuma and Yuichi Ikuhara and Masaki Azuma",

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TY - JOUR

T1 - Effect of oxygen pressure on electrical properties of BiFe 0.9Co0.1O3 thin films prepared by pulsed laser deposition

AU - Hojo, Hajime

AU - Onuma, Ko

AU - Ikuhara, Yuichi

AU - Azuma, Masaki

PY - 2013/9/1

Y1 - 2013/9/1

N2 - The crystal structures and electrical properties of epitaxial BiFe 0.9Co0.1O3 thin films grown by pulsed laser deposition on SrRuO3/SrTiO3(001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe 0.9Co0.1O3 thin films monotonically decreases with increasing oxygen pressure from 10 to 17 Pa, while the leakage current is minimum at 15 Pa. Oxygen content variation in the BiFe0.9Co 0.1O3 thin films is proposed to explain the obtained experimental results. The BiFe0.9Co0.1O3 thin film deposited at 15 Pa shows ferroelectric switching behavior with inversion current at room temperature.

AB - The crystal structures and electrical properties of epitaxial BiFe 0.9Co0.1O3 thin films grown by pulsed laser deposition on SrRuO3/SrTiO3(001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe 0.9Co0.1O3 thin films monotonically decreases with increasing oxygen pressure from 10 to 17 Pa, while the leakage current is minimum at 15 Pa. Oxygen content variation in the BiFe0.9Co 0.1O3 thin films is proposed to explain the obtained experimental results. The BiFe0.9Co0.1O3 thin film deposited at 15 Pa shows ferroelectric switching behavior with inversion current at room temperature.

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M3 - Article

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SN - 0021-4922

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 9 PART2

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ER -

Effect of oxygen pressure on electrical properties of BiFe _0.9Co_0.1O₃ thin films prepared by pulsed laser deposition

Abstract

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