Effect of oxygen on dislocation multiplication in silicon crystals

Wataru Fukushima, Hirofumi Harada, Yoshiji Miyamura, Masato Imai, Satoshi Nakano, Koichi Kakimoto

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


This paper aims to clarify the effect of oxygen on dislocation multiplication in silicon single crystals grown by the Czochralski and floating zone methods using numerical analysis. The analysis is based on the Alexander–Haasen–Sumino model and involves oxygen diffusion from the bulk to the dislocation cores during the annealing process in a furnace. The results show that after the annealing process, the dislocation density in silicon single crystals decreases as a function of oxygen concentration. This decrease can be explained by considering the unlocking stress caused by interstitial oxygen atoms. When the oxygen concentration is 7.5 × 1017 cm−3, the total stress is about 2 MPa and the unlocking stress is less than 1 MPa. As the oxygen concentration increases, the unlocking stress also increases; however, the dislocation velocity decreases.

Original languageEnglish
Pages (from-to)45-49
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - Mar 15 2018

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Effect of oxygen on dislocation multiplication in silicon crystals'. Together they form a unique fingerprint.

Cite this