Effect of nitrogen and aluminium on silicon carbide polytype stability

S. Nishizawa, F.Mercier

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    In this study, effects of nitrogen and aluminium dopant on the SiC crystal structure and polytype stability were investigated by density functional theory. With taking account of the stacking energy of additional bilayer, the carbon terminated surface as seed surface with nitrogen doped condition is the only condition of 4H single polytype SiC growth. Under the other conditions, polytype conversion and inclusion might occurre.

    Original languageEnglish
    Pages (from-to)99-102
    Number of pages4
    JournalJournal of Crystal Growth
    Volume518
    DOIs
    Publication statusPublished - Jul 15 2019

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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