Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano, Ken Ichi Hoshi, Satoru Tanaka, Ikuo Suemune, Xu Qiang Shen, Philippe Riblet, Peter Ramvall, Yoshinobu Aoyagi

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35 Citations (Scopus)


We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

Original languageEnglish
Pages (from-to)2879-2881
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - Nov 8 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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