Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano; Ken Ichi Hoshi; Satoru Tanaka; Ikuo Suemune; Xu Qiang Shen; Philippe Riblet; Peter Ramvall; Yoshinobu Aoyagi

doi:10.1063/1.125178

Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano, Ken Ichi Hoshi, Satoru Tanaka, Ikuo Suemune, Xu Qiang Shen, Philippe Riblet, Peter Ramvall, Yoshinobu Aoyagi

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

Original language	English
Pages (from-to)	2879-2881
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	19
DOIs	https://doi.org/10.1063/1.125178
Publication status	Published - Nov 8 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.125178

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title = "Effect of indium doping on the transient optical properties of GaN films",

abstract = "We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.",

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T1 - Effect of indium doping on the transient optical properties of GaN films

AU - Kumano, Hidekazu

AU - Hoshi, Ken Ichi

AU - Tanaka, Satoru

AU - Suemune, Ikuo

AU - Shen, Xu Qiang

AU - Riblet, Philippe

AU - Ramvall, Peter

AU - Aoyagi, Yoshinobu

PY - 1999/11/8

Y1 - 1999/11/8

N2 - We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

AB - We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

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Effect of indium doping on the transient optical properties of GaN films

Abstract

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