Abstract
We investigated the effect of H2S annealing on Ag-In-S thin films prepared by vacuum evaporation. In thin films annealed above 350 °C, diffraction peaks except chalcopyrite AgInS2 phase were not observed for a starting material ratio of 1.0 but observed for that of 1.2. Thin films annealed at 400 °C with a starting material ratio of 1.5 contained several phases. We found that the Ag/In ratios of the films could be controlled by changing the starting material ratio. Grains of films with composition ratios of 1.0 and 1.2 were nonuniform, whereas those with a composition ratio of 1.5 were uniform.
Original language | English |
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Article number | 05FB06 |
Journal | Japanese journal of applied physics |
Volume | 50 |
Issue number | 5 PART 3 |
DOIs | |
Publication status | Published - May 2011 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)