TY - JOUR
T1 - Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth
AU - Nishizawa, Shin ichi
AU - Kato, Tomohisa
AU - Arai, Kazuo
N1 - Funding Information:
This work was partially supported by the METI through NEDO. The authors thank Mr. Yasuo Kitou, Dr. Bahng Wook, Mr. Naoki Oyanagi and Mr. Fusao Hirose for their contributions on experiments. The author, SN, thanks Dr. Michel Pons at INPG for his help on numerical simulation.
PY - 2007/5/1
Y1 - 2007/5/1
N2 - Numerical simulation was applied to observe the phenomena inside a crucible in silicon carbide (SiC) sublimation growth. Numerical simulation results show that crystal quality as well as crystal shape strongly depends on the temperature distribution inside the crucible. Numerical simulation also suggested that it is important to reduce the residual stress in the crystal in order to avoid the generation of dislocations. From these results, SiC sublimation growth was controlled actively, and large and high quality SiC single crystal was grown.
AB - Numerical simulation was applied to observe the phenomena inside a crucible in silicon carbide (SiC) sublimation growth. Numerical simulation results show that crystal quality as well as crystal shape strongly depends on the temperature distribution inside the crucible. Numerical simulation also suggested that it is important to reduce the residual stress in the crystal in order to avoid the generation of dislocations. From these results, SiC sublimation growth was controlled actively, and large and high quality SiC single crystal was grown.
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U2 - 10.1016/j.jcrysgro.2006.12.022
DO - 10.1016/j.jcrysgro.2006.12.022
M3 - Article
AN - SCOPUS:34047270211
SN - 0022-0248
VL - 303
SP - 342
EP - 344
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1 SPEC. ISS.
ER -