TY - GEN
T1 - Effect of foreign metal doping on the gas sensing behaviors of SnO 2-based gas sensor
AU - Suematsu, Kouichi
AU - Honda, Takanori
AU - Yuasa, Masayoshi
AU - Kida, Tetsuya
AU - Shimanoe, Kengo
AU - Yamazoe, Noboru
PY - 2008
Y1 - 2008
N2 - Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO 2, the relative resistance (R/R0) is proportional to PO2n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.
AB - Recently, we have proposed some theoretical models, power laws and effect of particle shape and size, for semiconductor gas sensors. The models show that a depletion theory of semiconductor can be combined with the dynamics of adsorption and/or reactions of gases on the surface. In the case of SnO 2, the relative resistance (R/R0) is proportional to PO2n, where n is a constant value (n=1/2) on oxygen partial pressure. In addition, carrier concentration in SnO2 influences depth of the depletion. In this study, to experimentally reveal such effects, we tried to control the carrier concentration in SnO2 by foreign doping and examined their electrical resistance and sensor response. Correlations between doping concentration, crystalline size, and partial pressures of oxygen and H2 on the electric resistance are discussed to reveal the material design for semiconductor gas sensors.
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M3 - Conference contribution
AN - SCOPUS:56349104834
SN - 0878493786
SN - 9780878493784
T3 - Advanced Materials Research
SP - 1502
EP - 1505
BT - Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures
PB - Trans Tech Publications
T2 - Multi-functional Materials and Structures - International Conference on Multifunctional Materials and Structures
Y2 - 28 July 2008 through 31 July 2008
ER -