Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate

M. Kumano; Y. Ando; K. Ueda; T. Sadoh; K. Narumi; Y. Maeda; M. Miyao

doi:10.1149/1.2778405

Effect of Fe/Si ratio on epitaxial growth of Fe₃Si on Ge substrate

M. Kumano
, Y. Ando
, K. Ueda
, T. Sadoh
, K. Narumi
, Y. Maeda
, M. Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe ₃Si on Ge substrate have been investigated in a wide range of growth temperatures (60-300°C), From XRD measurements, it was found that Fe ₃Si layers were epitaxially grown on Ge(111) substrates at 60-200°C under the stoichiometric (Fe/Si ratio of Fe:Si=3:1) and non-stoichiometric (Fe/Si ratio of Fe:Si=4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe₃Si/Ge interfaces began at a growth temperature of 300°C. In the case of MBE under the stoichiometric condition (Fe:Si=3:1), the crystallinity of Fe₃Si is significantly improved compared to the non-stoichiometric condition (Fe:Si=4:1). As a result, very low χ_min was obtained in a wide temperature (60-200°C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe₃Si/Ge structures with atomically flat interfaces were realized at a low temperature (∼200°C) under the stoichiometric condition.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on ULSI Process Integration
Publisher	Electrochemical Society Inc.
Pages	481-485
Number of pages	5
Edition	6
ISBN (Electronic)	9781566775724
ISBN (Print)	9781566775724
DOIs	https://doi.org/10.1149/1.2778405
Publication status	Published - 2007
Event	5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States Duration: Oct 7 2007 → Oct 12 2007

Publication series

Name	ECS Transactions
Number	6
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on ULSI Process Integration - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	10/7/07 → 10/12/07

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/1.2778405

Cite this

Kumano, M, Ando, Y, Ueda, K, Sadoh, T, Narumi, K, Maeda, Y & Miyao, M 2007, Effect of Fe/Si ratio on epitaxial growth of Fe₃Si on Ge substrate. in ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 edn, ECS Transactions, no. 6, vol. 11, Electrochemical Society Inc., pp. 481-485, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2778405

@inproceedings{e4bcd345aa69476e92d389f41ca203cd,

title = "Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate",

abstract = "The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe 3Si on Ge substrate have been investigated in a wide range of growth temperatures (60-300°C), From XRD measurements, it was found that Fe 3Si layers were epitaxially grown on Ge(111) substrates at 60-200°C under the stoichiometric (Fe/Si ratio of Fe:Si=3:1) and non-stoichiometric (Fe/Si ratio of Fe:Si=4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe3Si/Ge interfaces began at a growth temperature of 300°C. In the case of MBE under the stoichiometric condition (Fe:Si=3:1), the crystallinity of Fe3Si is significantly improved compared to the non-stoichiometric condition (Fe:Si=4:1). As a result, very low χmin was obtained in a wide temperature (60-200°C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe3Si/Ge structures with atomically flat interfaces were realized at a low temperature (∼200°C) under the stoichiometric condition.",

author = "M. Kumano and Y. Ando and K. Ueda and T. Sadoh and K. Narumi and Y. Maeda and M. Miyao",

year = "2007",

doi = "10.1149/1.2778405",

language = "English",

isbn = "9781566775724",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "481--485",

booktitle = "ECS Transactions - 5th International Symposium on ULSI Process Integration",

edition = "6",

note = "5th International Symposium on ULSI Process Integration - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",

}

TY - GEN

T1 - Effect of Fe/Si ratio on epitaxial growth of Fe3Si on Ge substrate

AU - Kumano, M.

AU - Ando, Y.

AU - Ueda, K.

AU - Sadoh, T.

AU - Narumi, K.

AU - Maeda, Y.

AU - Miyao, M.

PY - 2007

Y1 - 2007

N2 - The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe 3Si on Ge substrate have been investigated in a wide range of growth temperatures (60-300°C), From XRD measurements, it was found that Fe 3Si layers were epitaxially grown on Ge(111) substrates at 60-200°C under the stoichiometric (Fe/Si ratio of Fe:Si=3:1) and non-stoichiometric (Fe/Si ratio of Fe:Si=4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe3Si/Ge interfaces began at a growth temperature of 300°C. In the case of MBE under the stoichiometric condition (Fe:Si=3:1), the crystallinity of Fe3Si is significantly improved compared to the non-stoichiometric condition (Fe:Si=4:1). As a result, very low χmin was obtained in a wide temperature (60-200°C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe3Si/Ge structures with atomically flat interfaces were realized at a low temperature (∼200°C) under the stoichiometric condition.

AB - The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe 3Si on Ge substrate have been investigated in a wide range of growth temperatures (60-300°C), From XRD measurements, it was found that Fe 3Si layers were epitaxially grown on Ge(111) substrates at 60-200°C under the stoichiometric (Fe/Si ratio of Fe:Si=3:1) and non-stoichiometric (Fe/Si ratio of Fe:Si=4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe3Si/Ge interfaces began at a growth temperature of 300°C. In the case of MBE under the stoichiometric condition (Fe:Si=3:1), the crystallinity of Fe3Si is significantly improved compared to the non-stoichiometric condition (Fe:Si=4:1). As a result, very low χmin was obtained in a wide temperature (60-200°C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe3Si/Ge structures with atomically flat interfaces were realized at a low temperature (∼200°C) under the stoichiometric condition.

UR - https://www.scopus.com/pages/publications/45749147786

UR - https://www.scopus.com/pages/publications/45749147786#tab=citedBy

U2 - 10.1149/1.2778405

DO - 10.1149/1.2778405

M3 - Conference contribution

AN - SCOPUS:45749147786

SN - 9781566775724

T3 - ECS Transactions

SP - 481

EP - 485

BT - ECS Transactions - 5th International Symposium on ULSI Process Integration

PB - Electrochemical Society Inc.

T2 - 5th International Symposium on ULSI Process Integration - 212th ECS Meeting

Y2 - 7 October 2007 through 12 October 2007

ER -