Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions

Dong Ju Bai; Akiyoshi Baba; Atsushi Kenjo; Taizoh Sadoh; Hiroshi Nakashima; Hiroshi Mori; Toshio Tsurushima

Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Abstract

Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.

Original language	English
Pages (from-to)	219-223
Number of pages	5
Journal	Research Reports on Information Science and Electrical Engineering of Kyushu University
Volume	2
Issue number	2
Publication status	Published - Sept 1997

All Science Journal Classification (ASJC) codes

Computer Science(all)
Electrical and Electronic Engineering

Cite this

Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions. / Bai, Dong Ju; Baba, Akiyoshi; Kenjo, Atsushi et al.
In: Research Reports on Information Science and Electrical Engineering of Kyushu University, Vol. 2, No. 2, 09.1997, p. 219-223.

Research output: Contribution to journal › Article › peer-review

@article{61ee7003b9db40f3b08f9e2940ef086f,

title = "Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions",

abstract = "Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.",

author = "Bai, {Dong Ju} and Akiyoshi Baba and Atsushi Kenjo and Taizoh Sadoh and Hiroshi Nakashima and Hiroshi Mori and Toshio Tsurushima",

year = "1997",

month = sep,

language = "English",

volume = "2",

pages = "219--223",

journal = "Research Reports on Information Science and Electrical Engineering of Kyushu University",

issn = "1342-3819",

publisher = "Kyushu University, Faculty of Science",

number = "2",

}

TY - JOUR

T1 - Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions

AU - Bai, Dong Ju

AU - Baba, Akiyoshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Nakashima, Hiroshi

AU - Mori, Hiroshi

AU - Tsurushima, Toshio

PY - 1997/9

Y1 - 1997/9

N2 - Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.

AB - Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0031224479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031224479&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031224479

SN - 1342-3819

VL - 2

SP - 219

EP - 223

JO - Research Reports on Information Science and Electrical Engineering of Kyushu University

JF - Research Reports on Information Science and Electrical Engineering of Kyushu University

IS - 2

ER -

Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions

Abstract

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this