Effect of crystallinity on residual strain distribution in cast-grown Si

Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We report the correlation between the crystallinity of ingots grown by the directional solidification technique and the residual strain and dislocation distribution. It was found that mono-like ingots have a 20-25% higher averaged residual strain than multicrystalline Si ingots grown under the same conditions. However the existence of local high-strained areas, which were frequently found in multicrystalline Si ingots, is reduced in mono-like Si ingots. In addition, a reduction in dislocation density was observed. This effect and the decrease in local high strain could be attributed to the decrease in grain boundaries in the mono-like ingots.

Original languageEnglish
Article number065501
JournalJapanese journal of applied physics
Issue number6 PART 1
Publication statusPublished - Jun 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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