TY - JOUR
T1 - Effect of crystallinity on residual strain distribution in cast-grown Si
AU - Jiptner, Karolin
AU - Fukuzawa, Masayuki
AU - Miyamura, Yoshiji
AU - Harada, Hirofumi
AU - Sekiguchi, Takashi
PY - 2013/6
Y1 - 2013/6
N2 - We report the correlation between the crystallinity of ingots grown by the directional solidification technique and the residual strain and dislocation distribution. It was found that mono-like ingots have a 20-25% higher averaged residual strain than multicrystalline Si ingots grown under the same conditions. However the existence of local high-strained areas, which were frequently found in multicrystalline Si ingots, is reduced in mono-like Si ingots. In addition, a reduction in dislocation density was observed. This effect and the decrease in local high strain could be attributed to the decrease in grain boundaries in the mono-like ingots.
AB - We report the correlation between the crystallinity of ingots grown by the directional solidification technique and the residual strain and dislocation distribution. It was found that mono-like ingots have a 20-25% higher averaged residual strain than multicrystalline Si ingots grown under the same conditions. However the existence of local high-strained areas, which were frequently found in multicrystalline Si ingots, is reduced in mono-like Si ingots. In addition, a reduction in dislocation density was observed. This effect and the decrease in local high strain could be attributed to the decrease in grain boundaries in the mono-like ingots.
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U2 - 10.7567/JJAP.52.065501
DO - 10.7567/JJAP.52.065501
M3 - Article
AN - SCOPUS:84881045963
SN - 0021-4922
VL - 52
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 6 PART 1
M1 - 065501
ER -