Effect of Cr2O3 and NiO dopants in α-Al 2O3 on its electrical conductivity under electron irradiation

K. Shiiyama; A. Shiraishi; M. Kutsuwada; S. Matsumura; C. Kinoshita

doi:10.1016/j.jnucmat.2004.04.239

Effect of Cr₂O₃ and NiO dopants in α-Al ₂O₃ on its electrical conductivity under electron irradiation

K. Shiiyama, A. Shiraishi, M. Kutsuwada, S. Matsumura, C. Kinoshita

Quantum Sciences of Materials

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electrical conductivity of single crystals of α-Al ₂O₃ doped with Cr₂O₃ (0.03-2.5 wt%), NiO (0.75 wt%) plus Cr₂O₃ (0.03-0.15 wt%), and NiO (0.75 wt%) has been measured under 1 MeV electron irradiation at 300 K to investigate the effects of the concentration of impurity and of the depth of impurity levels in forbidden bands on the radiation induced conductivity (RIC). The RIC of Cr₂O₃ and/or NiO doped α-Al₂O₃ decreases with increasing concentration of Cr₂O₃ and/or NiO dopants. The electrical conductivity of 2.5 wt% Cr₂O₃ doped α-Al₂O₃ is smaller than any other doped materials tested. The dose rate exponent for Cr₂O₃ doped α-Al₂O₃ is smaller than that for NiO plus Cr ₂O₃ doped material, due to deeper trapping centers of Cr (5.8 eV from the conduction band) than those of Ni (2.0 eV). Doping impurities with deep trapping centers are most effective for suppressing RIC.

Original language	English
Pages (from-to)	1520-1523
Number of pages	4
Journal	Journal of Nuclear Materials
Volume	329-333
Issue number	1-3 PART B
DOIs	https://doi.org/10.1016/j.jnucmat.2004.04.239
Publication status	Published - Aug 1 2004
Event	Proceedings of the 11th Conference on Fusion Research - Kyoto, Japan Duration: Dec 7 2003 → Dec 12 2003

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
General Materials Science
Nuclear Energy and Engineering

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10.1016/j.jnucmat.2004.04.239

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@article{37261470029d4fd190614b8b98617a4f,

title = "Effect of Cr2O3 and NiO dopants in α-Al 2O3 on its electrical conductivity under electron irradiation",

abstract = "The electrical conductivity of single crystals of α-Al 2O3 doped with Cr2O3 (0.03-2.5 wt%), NiO (0.75 wt%) plus Cr2O3 (0.03-0.15 wt%), and NiO (0.75 wt%) has been measured under 1 MeV electron irradiation at 300 K to investigate the effects of the concentration of impurity and of the depth of impurity levels in forbidden bands on the radiation induced conductivity (RIC). The RIC of Cr2O3 and/or NiO doped α-Al2O3 decreases with increasing concentration of Cr2O3 and/or NiO dopants. The electrical conductivity of 2.5 wt% Cr2O3 doped α-Al2O3 is smaller than any other doped materials tested. The dose rate exponent for Cr2O3 doped α-Al2O3 is smaller than that for NiO plus Cr 2O3 doped material, due to deeper trapping centers of Cr (5.8 eV from the conduction band) than those of Ni (2.0 eV). Doping impurities with deep trapping centers are most effective for suppressing RIC.",

author = "K. Shiiyama and A. Shiraishi and M. Kutsuwada and S. Matsumura and C. Kinoshita",

year = "2004",

month = aug,

day = "1",

doi = "10.1016/j.jnucmat.2004.04.239",

language = "English",

volume = "329-333",

pages = "1520--1523",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

publisher = "Elsevier",

number = "1-3 PART B",

}

TY - JOUR

T1 - Effect of Cr2O3 and NiO dopants in α-Al 2O3 on its electrical conductivity under electron irradiation

AU - Shiiyama, K.

AU - Shiraishi, A.

AU - Kutsuwada, M.

AU - Matsumura, S.

AU - Kinoshita, C.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The electrical conductivity of single crystals of α-Al 2O3 doped with Cr2O3 (0.03-2.5 wt%), NiO (0.75 wt%) plus Cr2O3 (0.03-0.15 wt%), and NiO (0.75 wt%) has been measured under 1 MeV electron irradiation at 300 K to investigate the effects of the concentration of impurity and of the depth of impurity levels in forbidden bands on the radiation induced conductivity (RIC). The RIC of Cr2O3 and/or NiO doped α-Al2O3 decreases with increasing concentration of Cr2O3 and/or NiO dopants. The electrical conductivity of 2.5 wt% Cr2O3 doped α-Al2O3 is smaller than any other doped materials tested. The dose rate exponent for Cr2O3 doped α-Al2O3 is smaller than that for NiO plus Cr 2O3 doped material, due to deeper trapping centers of Cr (5.8 eV from the conduction band) than those of Ni (2.0 eV). Doping impurities with deep trapping centers are most effective for suppressing RIC.

AB - The electrical conductivity of single crystals of α-Al 2O3 doped with Cr2O3 (0.03-2.5 wt%), NiO (0.75 wt%) plus Cr2O3 (0.03-0.15 wt%), and NiO (0.75 wt%) has been measured under 1 MeV electron irradiation at 300 K to investigate the effects of the concentration of impurity and of the depth of impurity levels in forbidden bands on the radiation induced conductivity (RIC). The RIC of Cr2O3 and/or NiO doped α-Al2O3 decreases with increasing concentration of Cr2O3 and/or NiO dopants. The electrical conductivity of 2.5 wt% Cr2O3 doped α-Al2O3 is smaller than any other doped materials tested. The dose rate exponent for Cr2O3 doped α-Al2O3 is smaller than that for NiO plus Cr 2O3 doped material, due to deeper trapping centers of Cr (5.8 eV from the conduction band) than those of Ni (2.0 eV). Doping impurities with deep trapping centers are most effective for suppressing RIC.

UR - http://www.scopus.com/inward/record.url?scp=3342989163&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3342989163&partnerID=8YFLogxK

U2 - 10.1016/j.jnucmat.2004.04.239

DO - 10.1016/j.jnucmat.2004.04.239

M3 - Conference article

AN - SCOPUS:3342989163

SN - 0022-3115

VL - 329-333

SP - 1520

EP - 1523

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

IS - 1-3 PART B

T2 - Proceedings of the 11th Conference on Fusion Research

Y2 - 7 December 2003 through 12 December 2003

ER -

Effect of Cr₂O₃ and NiO dopants in α-Al ₂O₃ on its electrical conductivity under electron irradiation

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