Effect of cosubstitution of la and v in Bi4Ti3O 12 thin films on the low-temperature deposition

Takayuki Watanabe, Hiroshi Funakubo, Minoru Osada, Yuji Noguchi, Masaru Miyayama

Research output: Contribution to journalArticlepeer-review

201 Citations (Scopus)


The ferroelectricity of Bi4Ti3O12 (BIT), (Bi3.2La0.8)Ti3O12 (BLT), Bi 4(Ti2.97V0.03)O12 (BTV), and (Bi3.2La0.8)(Ti2.97V0.03)O 12 (BLTV) films prepared at 600°C by metalorganic chemical vapor deposition was compared. For the BIT, BLT, BTV films deposited on (111)Pt/TiO2/SiO2/Si substrates, the ferroelectricity was not obtained even though the films consisted of a single phase. On the other hand, the BLTV films exhibited clear ferroelectricity. Furthermore, the degree of squareness of the hysteresis loops of the BLTV films was improved by changing the bottom electrode from Pt to Ir, (111)Ir/TiO2/SiO2/Si substrate; the remanent polarization and the coercive field became 8.5 μC/cm2 and 48 kV/cm, respectively. Moreover, good fatigue endurance up to 109 switching cycles was confirmed for the (Bi 3.2La0.8)(Ti2.97V0.03)O 12 thin film. Therefore, cosubstitution of La and V in BIT thin films is effective for lowering the deposition temperature of the film.

Original languageEnglish
Pages (from-to)100-102
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - Jan 7 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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