Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

Satoru Kaneko; Kensuke Akiyama; Yoshitada Shimizu; Takeshi Ito; Shinji Yasaka; Masahiko Mitsuhashi; Seishiro Ohya; Keisuke Saito; Takayuki Watanabe; Shoji Okamoto; Hiroshi Funakubo

doi:10.1143/JJAP.43.1532

Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

Satoru Kaneko, Kensuke Akiyama, Yoshitada Shimizu, Takeshi Ito, Shinji Yasaka, Masahiko Mitsuhashi, Seishiro Ohya, Keisuke Saito, Takayuki Watanabe, Shoji Okamoto, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.

Original language	English
Pages (from-to)	1532-1535
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.43.1532
Publication status	Published - Apr 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser",

abstract = "Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.",

author = "Satoru Kaneko and Kensuke Akiyama and Yoshitada Shimizu and Takeshi Ito and Shinji Yasaka and Masahiko Mitsuhashi and Seishiro Ohya and Keisuke Saito and Takayuki Watanabe and Shoji Okamoto and Hiroshi Funakubo",

year = "2004",

month = apr,

doi = "10.1143/JJAP.43.1532",

language = "English",

volume = "43",

pages = "1532--1535",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

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TY - JOUR

T1 - Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

AU - Kaneko, Satoru

AU - Akiyama, Kensuke

AU - Shimizu, Yoshitada

AU - Ito, Takeshi

AU - Yasaka, Shinji

AU - Mitsuhashi, Masahiko

AU - Ohya, Seishiro

AU - Saito, Keisuke

AU - Watanabe, Takayuki

AU - Okamoto, Shoji

AU - Funakubo, Hiroshi

PY - 2004/4

Y1 - 2004/4

N2 - Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.

AB - Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.

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DO - 10.1143/JJAP.43.1532

M3 - Article

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SN - 0021-4922

VL - 43

SP - 1532

EP - 1535

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 A

ER -

Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

Abstract

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