Abstract
Synthesis of c-BN was enhanced with DC bias application on the substrate in atmospheric pressure induction plasmas in this study. Previous c-BN synthesis has been performed under reduced pressure using explosive and hazardous gases. For industrial application such as coating on cutting tools, improvement of c-BN synthesis method has been strongly required. Therefore, the purpose of this paper is to investigate the mechanism of enhanced c-BN synthesis with bias application using safe starting material, h-BN and boron powder, under atmospheric pressure. The bias application leads to the optimum B/N ratio as well as the reduction of oxygen impurity in the deposits, resulting in the successful c-BN synthesis under atmospheric pressure. Important process for c-BN formation is attributed to the formation of high density of activated species such as N+, and the quenching process on the substrate. We conclude that bias application is important to increase activated species.
Original language | English |
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Pages (from-to) | 4462-4467 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 13 |
DOIs | |
Publication status | Published - May 1 2008 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry