Effect of annealing for AG-IN-S thin films prepared by a vacuum evaporation method

Yoji Akaki; Kyohei Yamashita; Tsuyoshi Yoshitake; Shigeyuki Nakamura; Satoru Seto; Takahiro Tokuda; Kenji Yoshino

doi:10.1109/PVSC.2010.5614345

Effect of annealing for AG-IN-S thin films prepared by a vacuum evaporation method

Yoji Akaki, Kyohei Yamashita, Tsuyoshi Yoshitake, Shigeyuki Nakamura, Satoru Seto, Takahiro Tokuda, Kenji Yoshino

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Ag-In-S thin films deposited by a single-source thermal evaporation method were annealed in H₂S atmosphere from 300 to 450 °C for 60 min. after the evaporation. All the films annealed above 300 °C were obtained chalcopyrite AgInS₂ crystal phase. The composition ratios of Ag, In and S atoms become close to stoichiometry with increasing the annealing temperature. The grain size of the AgInS₂ crystal in the films annealed at 400 °C are approximately 1.5∼4 μm.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	2405-2407
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2010.5614345
Publication status	Published - Dec 20 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Other

Other	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

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10.1109/PVSC.2010.5614345

Cite this

Akaki, Y, Yamashita, K, Yoshitake, T, Nakamura, S, Seto, S, Tokuda, T & Yoshino, K 2010, Effect of annealing for AG-IN-S thin films prepared by a vacuum evaporation method. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614345, pp. 2405-2407, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5614345

@inproceedings{993b8af8e0284081872122c79566434d,

title = "Effect of annealing for AG-IN-S thin films prepared by a vacuum evaporation method",

abstract = "Ag-In-S thin films deposited by a single-source thermal evaporation method were annealed in H2S atmosphere from 300 to 450 °C for 60 min. after the evaporation. All the films annealed above 300 °C were obtained chalcopyrite AgInS2 crystal phase. The composition ratios of Ag, In and S atoms become close to stoichiometry with increasing the annealing temperature. The grain size of the AgInS2 crystal in the films annealed at 400 °C are approximately 1.5∼4 μm.",

author = "Yoji Akaki and Kyohei Yamashita and Tsuyoshi Yoshitake and Shigeyuki Nakamura and Satoru Seto and Takahiro Tokuda and Kenji Yoshino",

year = "2010",

month = dec,

day = "20",

doi = "10.1109/PVSC.2010.5614345",

language = "English",

isbn = "9781424458912",

pages = "2405--2407",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

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T1 - Effect of annealing for AG-IN-S thin films prepared by a vacuum evaporation method

AU - Akaki, Yoji

AU - Yamashita, Kyohei

AU - Yoshitake, Tsuyoshi

AU - Nakamura, Shigeyuki

AU - Seto, Satoru

AU - Tokuda, Takahiro

AU - Yoshino, Kenji

PY - 2010/12/20

Y1 - 2010/12/20

N2 - Ag-In-S thin films deposited by a single-source thermal evaporation method were annealed in H2S atmosphere from 300 to 450 °C for 60 min. after the evaporation. All the films annealed above 300 °C were obtained chalcopyrite AgInS2 crystal phase. The composition ratios of Ag, In and S atoms become close to stoichiometry with increasing the annealing temperature. The grain size of the AgInS2 crystal in the films annealed at 400 °C are approximately 1.5∼4 μm.

AB - Ag-In-S thin films deposited by a single-source thermal evaporation method were annealed in H2S atmosphere from 300 to 450 °C for 60 min. after the evaporation. All the films annealed above 300 °C were obtained chalcopyrite AgInS2 crystal phase. The composition ratios of Ag, In and S atoms become close to stoichiometry with increasing the annealing temperature. The grain size of the AgInS2 crystal in the films annealed at 400 °C are approximately 1.5∼4 μm.

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U2 - 10.1109/PVSC.2010.5614345

DO - 10.1109/PVSC.2010.5614345

M3 - Conference contribution

AN - SCOPUS:78650096281

SN - 9781424458912

SP - 2405

EP - 2407

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

Y2 - 20 June 2010 through 25 June 2010

ER -

Effect of annealing for AG-IN-S thin films prepared by a vacuum evaporation method

Abstract

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