Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator

Haigui Yang; Masatoshi Iyota; Shogo Ikeura; Dong Wang; Hiroshi Nakashima

doi:10.4028/www.scientific.net/KEM.470.79

Effect of Al₂O₃ deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator

Haigui Yang
, Masatoshi Iyota
, Shogo Ikeura
, Dong Wang
, Hiroshi Nakashima

Energy Engineering Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Al₂O₃ deposition and subsequent post-deposition annealing (Al₂O₃-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al₂O₃-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al ₂O₃-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

Original language	English
Title of host publication	Technology Evolution for Silicon Nano-Electronics
Publisher	Trans Tech Publications Ltd
Pages	79-84
Number of pages	6
ISBN (Print)	9783037850510
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.470.79
Publication status	Published - 2011

Publication series

Name	Key Engineering Materials
Volume	470
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.470.79

Cite this

Effect of Al₂O₃ deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator. / Yang, Haigui; Iyota, Masatoshi; Ikeura, Shogo et al.
Technology Evolution for Silicon Nano-Electronics. Trans Tech Publications Ltd, 2011. p. 79-84 (Key Engineering Materials; Vol. 470).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al 2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.",

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AU - Nakashima, Hiroshi

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AB - Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al 2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

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KW - Ge condensation

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