TY - JOUR
T1 - Effect of Al substitution on the thermoelectric properties of the type VIII clathrate Ba 8Ga 16Sn 30
AU - Deng, S. K.
AU - Saiga, Y.
AU - Suekuni, K.
AU - Takabatake, T.
N1 - Funding Information:
We would like to thank Y. Shibata for EPMA performed at Natural Science Center for Basic Research and Development, Hiroshima University. We are grateful to Y. Kono and N. Ohya for the measurements of thermal diffusivity at DENSO Corporation Research Laboratories. This work was supported by NEDO Grant No. 09002139-0, Grant-in-Aid for Scientific Research from MEXT of Japan, Grants No. 19051011 and No. 20102004, and National Natural Science Foundation of China, Grant No. 50902119.
PY - 2011/5
Y1 - 2011/5
N2 - Single-crystal samples of the type VIII clathrate Ba 8Ga 16-x Al x Sn 30 (0 ≤ x ≤ 12) were prepared by the Sn-flux method, and the structural and electrical properties were studied from 300 K to 600 K. The lattice parameter increases linearly as x is increased from 0 to 10.5, which is the solubility limit of Al. For all samples, the electrical conductivity σ decreases monotonically as the temperature is increased. σ(T = 300 K) increases from 1.88 × 10 4 S/m for x = 0 to 3.03 × 10 4 S/m for x = 2, and then gradually decreases to 2.4 × 10 4 S/m with further increase of x to 8. The increase of σ for Al-substituted samples is attributed to enhancement of carrier mobility. The Seebeck coefficients of samples with 0 ≤ x ≤ 8 are negative with large values, and the absolute values increase from 240 μV/K to 320 μV/K as the temperature increases from 300 K to 600 K. At 300 K, the effective mass m*/m 0 is in the range from 0.53 to 0.67, and the samples with x = 6 and x = 8 have a rather low thermal conductivity of 0.72 W/mK and 0.78 W/mK, respectively. ZT reaches 1.2 at 500 K for x = 6.
AB - Single-crystal samples of the type VIII clathrate Ba 8Ga 16-x Al x Sn 30 (0 ≤ x ≤ 12) were prepared by the Sn-flux method, and the structural and electrical properties were studied from 300 K to 600 K. The lattice parameter increases linearly as x is increased from 0 to 10.5, which is the solubility limit of Al. For all samples, the electrical conductivity σ decreases monotonically as the temperature is increased. σ(T = 300 K) increases from 1.88 × 10 4 S/m for x = 0 to 3.03 × 10 4 S/m for x = 2, and then gradually decreases to 2.4 × 10 4 S/m with further increase of x to 8. The increase of σ for Al-substituted samples is attributed to enhancement of carrier mobility. The Seebeck coefficients of samples with 0 ≤ x ≤ 8 are negative with large values, and the absolute values increase from 240 μV/K to 320 μV/K as the temperature increases from 300 K to 600 K. At 300 K, the effective mass m*/m 0 is in the range from 0.53 to 0.67, and the samples with x = 6 and x = 8 have a rather low thermal conductivity of 0.72 W/mK and 0.78 W/mK, respectively. ZT reaches 1.2 at 500 K for x = 6.
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U2 - 10.1007/s11664-011-1555-7
DO - 10.1007/s11664-011-1555-7
M3 - Article
AN - SCOPUS:79955911576
SN - 0361-5235
VL - 40
SP - 1124
EP - 1128
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 5
ER -