Edge channel transport in the InAs/GaSb topological insulating phase

Kyoichi Suzuki, Yuichi Harada, Koji Onomitsu, Koji Muraki

Research output: Contribution to journalArticlepeer-review

116 Citations (Scopus)


Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-μm edge channel length. For a sample with a 12-nm-thick InAs layer, nonlocal resistance measurements with various current/voltage contact configurations reveal that the transport is dominated by edge channels with a negligible bulk contribution. Systematic nonlocal measurements allow us to extract the resistance of individual edge channels, revealing sharp resistance fluctuations indicative of inelastic scattering. Our results show that the InAs/GaSb system can be tailored to have conducting edge channels while keeping a gap in the bulk region and provide a way of studying two-dimensional topological insulators even when quantized transport is absent.

Original languageEnglish
Article number235311
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - Jun 18 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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