Easy removal of mold for imprint lithography by ion beam modification of photoresist surface

A. Baba; M. Iwamoto; K. Tsubaki; T. Asano

doi:10.1109/IMNC.2001.984106

Easy removal of mold for imprint lithography by ion beam modification of photoresist surface

A. Baba, M. Iwamoto, K. Tsubaki, T. Asano

Center for Japan-Egypt Cooperation in Science and Technology（E-JUST Center）

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Summary form only given. We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.

Original language	English
Title of host publication	2001 International Microprocesses and Nanotechnology Conference, MNC 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	96-97
Number of pages	2
ISBN (Electronic)	4891140178, 9784891140175
DOIs	https://doi.org/10.1109/IMNC.2001.984106
Publication status	Published - Jan 1 2001
Event	International Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan Duration: Oct 31 2001 → Nov 2 2001

Publication series

Name	2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2001
Country/Territory	Japan
City	Shimane
Period	10/31/01 → 11/2/01

All Science Journal Classification (ASJC) codes

Biotechnology
Fluid Flow and Transfer Processes
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/IMNC.2001.984106

Cite this

Baba, A., Iwamoto, M., Tsubaki, K., & Asano, T. (2001). Easy removal of mold for imprint lithography by ion beam modification of photoresist surface. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 96-97). Article 984106 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984106

Easy removal of mold for imprint lithography by ion beam modification of photoresist surface. / Baba, A.; Iwamoto, M.; Tsubaki, K. et al.
2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 96-97 984106 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Baba, A, Iwamoto, M, Tsubaki, K & Asano, T 2001, Easy removal of mold for imprint lithography by ion beam modification of photoresist surface. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984106, 2001 International Microprocesses and Nanotechnology Conference, MNC 2001, Institute of Electrical and Electronics Engineers Inc., pp. 96-97, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 10/31/01. https://doi.org/10.1109/IMNC.2001.984106

Baba A, Iwamoto M, Tsubaki K, Asano T. Easy removal of mold for imprint lithography by ion beam modification of photoresist surface. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 96-97. 984106. (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). doi: 10.1109/IMNC.2001.984106

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abstract = "Summary form only given. We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.",

author = "A. Baba and M. Iwamoto and K. Tsubaki and T. Asano",

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AU - Tsubaki, K.

AU - Asano, T.

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Y1 - 2001/1/1

N2 - Summary form only given. We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.

AB - Summary form only given. We have found that ion beam modification of the novolac photoresist surface is very effective in removing mold in NIL. Using this process, step-and-repeat pattern transfer becomes possible. In addition, this process can increase the imprint depth.

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T2 - International Microprocesses and Nanotechnology Conference, MNC 2001

Y2 - 31 October 2001 through 2 November 2001

ER -

Easy removal of mold for imprint lithography by ion beam modification of photoresist surface

Abstract

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All Science Journal Classification (ASJC) codes

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