Abstract
Mechanisms of enhancement of plastic deformation in TiAl responsible for ductility improvement of this material, have been studied by high-voltage electron microscopy (HVEM) and atom probe field ion microscopy (AP-FIM). During cross-twinning, a dislocation interaction occurs at twin boundaries. Dislocation networks and fine Ti3Al particles on the pre-existing twin boundaries promote the formation and movement of twinning partial dislocations, contributing to an improvement of ductility.
Original language | English |
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Pages (from-to) | 86-91 |
Number of pages | 6 |
Journal | Ultramicroscopy |
Volume | 39 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Nov 2 1991 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation