Dynamic force microscopy and X-ray photoemission spectroscopy studies of nanowire fabrication on a highly oriented line-structure of Al surface

Nanowire fabrication was implemented on the nanoscale highly-oriented line-structure of Al surface. An Al plate was chemically and successively electrochemically processed by applying dc voltage in H2SO4 solution in order to fabricate a nanoscale highly-oriented line structure on the surface. The line width was estimated under 50 nm. As a nanowire polymerization process, aniline monomer solved in pure water and oxidizing agent APS solved in HC1 successively dropped on the nanostructured Al surface. The Dynamic force microscopy (DFM) measurements and cross section analysis clarified that the line-structure still remained and the depth of the row became shallow after the polymerization process was applied. Since N Is core-level lines appeared after the aniline polymerization by X-ray photoemission spectroscopy (XPS) measurements, the aniline monomers were polymerized along the line and filled in the row channel.