Dynamic Avalanche (DA) phenomenon poses a fundamental limit on the operating current density, turn-off power loss as well as reliability of MOS-bipolar devices. Overcoming this phenomenon is essential to ensure their safe operation in emerging electric transport. In this work, detailed analysis of 1.2 kV trench gated IGBTs are undertaken through experiments and calibrated TCAD simulations to show the fundamental cause of the DA as well as a method to achieve DA free design for ultra-high current density operation and reliability in 1.2 kV Si-IGBTs.
|Title of host publication
|2019 IEEE International Electron Devices Meeting, IEDM 2019
|Institute of Electrical and Electronics Engineers Inc.
|Published - Dec 2019
|65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: Dec 7 2019 → Dec 11 2019
|Technical Digest - International Electron Devices Meeting, IEDM
|65th Annual IEEE International Electron Devices Meeting, IEDM 2019
|12/7/19 → 12/11/19
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry