Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS Technology

Islam Mansour; Marwa Mansour; Mohamed Aboualalaa; Ahmed Allam; Adel B. Abdel-Rahman; Ramesh K. Pokharel; Mohammed Abo-Zahhad

doi:10.1109/LMWC.2022.3179002

Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS Technology

Islam Mansour, Marwa Mansour, Mohamed Aboualalaa, Ahmed Allam, Adel B. Abdel-Rahman, Ramesh K. Pokharel, Mohammed Abo-Zahhad

Department of I&E Visionaries

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu $</tex-math> </inline-formula>m CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality (<inline-formula> <tex-math notation="LaTeX">$Q)$</tex-math> </inline-formula> factor. The first inductor is two halves shunted octagonal loops using the top layer (M<inline-formula> <tex-math notation="LaTeX">$_{6})$</tex-math> </inline-formula> and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers M<inline-formula> <tex-math notation="LaTeX">$_{\mathrm{5-2}}$</tex-math> </inline-formula> and used in current-reuse (CR) VCO. The M<inline-formula> <tex-math notation="LaTeX">$_{6}$</tex-math> </inline-formula> inductor improves the <inline-formula> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula>-factor by more than 25%over one loop inductor in the frequency band of interest, while the M<inline-formula> <tex-math notation="LaTeX">$_{\mathrm{5-2}}$</tex-math> </inline-formula> inductor uses four shunt layers to boost the <inline-formula> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula>-factor by 28% in <inline-formula> <tex-math notation="LaTeX">$K$</tex-math> </inline-formula>-band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>107 dBc/Hz at 1 MHz and FoM <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>185.8 dBc/Hz.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	IEEE Microwave and Wireless Components Letters
DOIs	https://doi.org/10.1109/LMWC.2022.3179002
Publication status	Accepted/In press - 2022

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2022.3179002

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Mansour, I., Mansour, M., Aboualalaa, M., Allam, A., Abdel-Rahman, A. B., Pokharel, R. K., & Abo-Zahhad, M. (Accepted/In press). Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS Technology. IEEE Microwave and Wireless Components Letters, 1-4. https://doi.org/10.1109/LMWC.2022.3179002

Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS Technology. / Mansour, Islam; Mansour, Marwa; Aboualalaa, Mohamed et al.
In: IEEE Microwave and Wireless Components Letters, 2022, p. 1-4.

Research output: Contribution to journal › Article › peer-review

Mansour, I, Mansour, M, Aboualalaa, M, Allam, A, Abdel-Rahman, AB, Pokharel, RK & Abo-Zahhad, M 2022, 'Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS Technology', IEEE Microwave and Wireless Components Letters, pp. 1-4. https://doi.org/10.1109/LMWC.2022.3179002

@article{f90d6c4564b346e1aafe15ba1f454b59,

title = "Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18- $\mu$ m CMOS Technology",

abstract = "This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18- $\mu $ m CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ( $Q)$ factor. The first inductor is two halves shunted octagonal loops using the top layer (M $_{6})$ and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers M $_{\mathrm{5-2}}$ and used in current-reuse (CR) VCO. The M $_{6}$ inductor improves the $Q$ -factor by more than 25%over one loop inductor in the frequency band of interest, while the M $_{\mathrm{5-2}}$ inductor uses four shunt layers to boost the $Q$ -factor by 28% in $K$ -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of $-$ 112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of $-$ 188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of $-$ 107 dBc/Hz at 1 MHz and FoM $-$ 185.8 dBc/Hz.",

author = "Islam Mansour and Marwa Mansour and Mohamed Aboualalaa and Ahmed Allam and Abdel-Rahman, {Adel B.} and Pokharel, {Ramesh K.} and Mohammed Abo-Zahhad",

note = "Publisher Copyright: IEEE",

year = "2022",

doi = "10.1109/LMWC.2022.3179002",

language = "English",

pages = "1--4",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18- $\mu$ m CMOS Technology

AU - Mansour, Islam

AU - Mansour, Marwa

AU - Aboualalaa, Mohamed

AU - Allam, Ahmed

AU - Abdel-Rahman, Adel B.

AU - Pokharel, Ramesh K.

AU - Abo-Zahhad, Mohammed

N1 - Publisher Copyright: IEEE

PY - 2022

Y1 - 2022

N2 - This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18- $\mu $ m CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ( $Q)$ factor. The first inductor is two halves shunted octagonal loops using the top layer (M $_{6})$ and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers M $_{\mathrm{5-2}}$ and used in current-reuse (CR) VCO. The M $_{6}$ inductor improves the $Q$ -factor by more than 25%over one loop inductor in the frequency band of interest, while the M $_{\mathrm{5-2}}$ inductor uses four shunt layers to boost the $Q$ -factor by 28% in $K$ -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of $-$ 112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of $-$ 188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of $-$ 107 dBc/Hz at 1 MHz and FoM $-$ 185.8 dBc/Hz.

AB - This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18- $\mu $ m CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ( $Q)$ factor. The first inductor is two halves shunted octagonal loops using the top layer (M $_{6})$ and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers M $_{\mathrm{5-2}}$ and used in current-reuse (CR) VCO. The M $_{6}$ inductor improves the $Q$ -factor by more than 25%over one loop inductor in the frequency band of interest, while the M $_{\mathrm{5-2}}$ inductor uses four shunt layers to boost the $Q$ -factor by 28% in $K$ -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of $-$ 112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of $-$ 188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of $-$ 107 dBc/Hz at 1 MHz and FoM $-$ 185.8 dBc/Hz.

UR - http://www.scopus.com/inward/record.url?scp=85131836645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85131836645&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2022.3179002

DO - 10.1109/LMWC.2022.3179002

M3 - Article

AN - SCOPUS:85131836645

SN - 1531-1309

SP - 1

EP - 4

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

ER -

Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS Technology

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