DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology

Syotaro Ono; Hiroshi Ohta; Hiroaki Yamashita; Masaru Izumisawa; Wataru Saito; Shingo Sato; Noboru Matsuda; Yoshihisa Ohishi; Masataka Tsuji; Jun Onodera; Georges Tchouangue

DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology

Syotaro Ono, Hiroshi Ohta, Hiroaki Yamashita, Masaru Izumisawa, Wataru Saito, Shingo Sato, Noboru Matsuda, Yoshihisa Ohishi, Masataka Tsuji, Jun Onodera, Georges Tchouangue

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

We developed new generation 600V-class superjunction (SJ) MOSFETs: DTMOS-IV series, which have innovative lower on-state resistance (RDS(ON)) by deep-trench filling process. The 30% reduction of specific on-state resistance (RDS(ON).SP) was attained by 27% of SJ pitch narrowing as compared with the previous generation of DTMOS-III series. With this DTMOS-IV technology, the lowest RDS(ON) was updated in each package class. In addition, better power efficiency was shown in Power Factor Correction (PFC) application by adjustment of RDS(ON)*QGD designed to become compatible with DTMOS-iii aiming at switching noise reduction, and 12% of output capacitance reduction.

Original language	English
Title of host publication	Proceedings - PCIM Europe 2012
Subtitle of host publication	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Pages	128-131
Number of pages	4
Publication status	Published - Dec 1 2012
Externally published	Yes
Event	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 - Nuremberg, Germany Duration: May 8 2012 → May 10 2012

Publication series

Name	PCIM Europe Conference Proceedings
ISSN (Electronic)	2191-3358

Conference

Conference	International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012
Country/Territory	Germany
City	Nuremberg
Period	5/8/12 → 5/10/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Ono, S., Ohta, H., Yamashita, H., Izumisawa, M., Saito, W., Sato, S., Matsuda, N., Ohishi, Y., Tsuji, M., Onodera, J., & Tchouangue, G. (2012). DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology. In Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 128-131). (PCIM Europe Conference Proceedings).

DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology. / Ono, Syotaro; Ohta, Hiroshi; Yamashita, Hiroaki et al.
Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. 2012. p. 128-131 (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ono, S, Ohta, H, Yamashita, H, Izumisawa, M, Saito, W, Sato, S, Matsuda, N, Ohishi, Y, Tsuji, M, Onodera, J & Tchouangue, G 2012, DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology. in Proceedings - PCIM Europe 2012: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. PCIM Europe Conference Proceedings, pp. 128-131, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012, Nuremberg, Germany, 5/8/12.

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title = "DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology",

abstract = "We developed new generation 600V-class superjunction (SJ) MOSFETs: DTMOS-IV series, which have innovative lower on-state resistance (RDS(ON)) by deep-trench filling process. The 30% reduction of specific on-state resistance (RDS(ON).SP) was attained by 27% of SJ pitch narrowing as compared with the previous generation of DTMOS-III series. With this DTMOS-IV technology, the lowest RDS(ON) was updated in each package class. In addition, better power efficiency was shown in Power Factor Correction (PFC) application by adjustment of RDS(ON)*QGD designed to become compatible with DTMOS-iii aiming at switching noise reduction, and 12% of output capacitance reduction.",

author = "Syotaro Ono and Hiroshi Ohta and Hiroaki Yamashita and Masaru Izumisawa and Wataru Saito and Shingo Sato and Noboru Matsuda and Yoshihisa Ohishi and Masataka Tsuji and Jun Onodera and Georges Tchouangue",

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T2 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012

AU - Ono, Syotaro

AU - Ohta, Hiroshi

AU - Yamashita, Hiroaki

AU - Izumisawa, Masaru

AU - Saito, Wataru

AU - Sato, Shingo

AU - Matsuda, Noboru

AU - Ohishi, Yoshihisa

AU - Tsuji, Masataka

AU - Onodera, Jun

AU - Tchouangue, Georges

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N2 - We developed new generation 600V-class superjunction (SJ) MOSFETs: DTMOS-IV series, which have innovative lower on-state resistance (RDS(ON)) by deep-trench filling process. The 30% reduction of specific on-state resistance (RDS(ON).SP) was attained by 27% of SJ pitch narrowing as compared with the previous generation of DTMOS-III series. With this DTMOS-IV technology, the lowest RDS(ON) was updated in each package class. In addition, better power efficiency was shown in Power Factor Correction (PFC) application by adjustment of RDS(ON)*QGD designed to become compatible with DTMOS-iii aiming at switching noise reduction, and 12% of output capacitance reduction.

AB - We developed new generation 600V-class superjunction (SJ) MOSFETs: DTMOS-IV series, which have innovative lower on-state resistance (RDS(ON)) by deep-trench filling process. The 30% reduction of specific on-state resistance (RDS(ON).SP) was attained by 27% of SJ pitch narrowing as compared with the previous generation of DTMOS-III series. With this DTMOS-IV technology, the lowest RDS(ON) was updated in each package class. In addition, better power efficiency was shown in Power Factor Correction (PFC) application by adjustment of RDS(ON)*QGD designed to become compatible with DTMOS-iii aiming at switching noise reduction, and 12% of output capacitance reduction.

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M3 - Conference contribution

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BT - Proceedings - PCIM Europe 2012

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ER -

DTMOS-IV: Rds(ON) innovation by deep-trench filling superjunction technology

Abstract

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Conference

All Science Journal Classification (ASJC) codes

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