Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

X. Q. Shen; S. Tanaka; S. Iwai; Y. Aoyagi

doi:10.1557/proc-482-223

Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

Research output: Contribution to journal › Conference article › peer-review

Abstract

GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH₃) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H₂-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

Original language	English
Pages (from-to)	223-226
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-223
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-482-223

Cite this

@article{8f5b8375c3eb4fc1bc4e91c8f73b10ab,

title = "Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE",

abstract = "GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.",

author = "Shen, {X. Q.} and S. Tanaka and S. Iwai and Y. Aoyagi",

year = "1997",

doi = "10.1557/proc-482-223",

language = "English",

volume = "482",

pages = "223--226",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

AU - Shen, X. Q.

AU - Tanaka, S.

AU - Iwai, S.

AU - Aoyagi, Y.

PY - 1997

Y1 - 1997

N2 - GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

AB - GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

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U2 - 10.1557/proc-482-223

DO - 10.1557/proc-482-223

M3 - Conference article

AN - SCOPUS:0031348638

SN - 0272-9172

VL - 482

SP - 223

EP - 226

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

Abstract

All Science Journal Classification (ASJC) codes

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