TY - JOUR
T1 - Drastic change in electronic domain structures via strong elastic coupling in VO2 films
AU - Yajima, Takeaki
AU - Ninomiya, Yuma
AU - Nishimura, Tomonori
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2015 American Physical Society.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/5/6
Y1 - 2015/5/6
N2 - We observed a drastic change in electronic domain structures during the metal-insulator transition (MIT) via strong elastic coupling in single crystalline VO2 films. The domain structure drastically changed from one type to another due to increasing elastic coupling with film thickness. This drastic change was caused by energetic competition between elastic coupling and structural disorder during the MIT, suggesting the microscopic stress engineering facilitate the electronic domain control in functional oxides.
AB - We observed a drastic change in electronic domain structures during the metal-insulator transition (MIT) via strong elastic coupling in single crystalline VO2 films. The domain structure drastically changed from one type to another due to increasing elastic coupling with film thickness. This drastic change was caused by energetic competition between elastic coupling and structural disorder during the MIT, suggesting the microscopic stress engineering facilitate the electronic domain control in functional oxides.
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U2 - 10.1103/PhysRevB.91.205102
DO - 10.1103/PhysRevB.91.205102
M3 - Article
AN - SCOPUS:84929603764
SN - 1098-0121
VL - 91
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 205102
ER -