Dose-dependent etching selectivity in SiO2 by focused ion beam

Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao

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The dose-dependent etching characteristics of SiO2 films irradiated with 40 keV Si2+ focused ion beams (FIBs) were comprehensively investigated. The etching rate in a buffered HF increased with increasing dose (8 × 1013-1 × 1015 cm-2), however it decreased for doses exceeding a critical value (1 × 1015 cm-2). The maximum selectivity of the etching rate of the irradiated region to the nonirradiated region was about 14, which was obtained for irradiation with the critical dose. The numerical simulation indicated that all of the Si atoms in SiO2 were displaced by irradiation with this critical dose. A simple model for the etching characteristics was proposed, in which the enhancement of etching by vacancies and the retardation of etching by implanted Si atoms were considered. The etching characteristics obtained by the experiments were quantitatively explained by the model.

Original languageEnglish
Pages (from-to)1855-1858
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - Apr 2003

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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