Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam

Translated title of the contribution: Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam

Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao

Research output: Contribution to journal › Article › peer-review

Translated title of the contribution	Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam
Original language	Undefined/Unknown
Pages (from-to)	1855-1858
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	1
Publication status	Published - Apr 30 2003

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title = "Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam",

author = "Taizoh Sadoh and Hiroomi Eguchi and Atsushi Kenjo and Masanobu Miyao",

year = "2003",

month = apr,

day = "30",

language = "未定義/不明",

volume = "42",

pages = "1855--1858",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam

AU - Sadoh, Taizoh

AU - Eguchi, Hiroomi

AU - Kenjo, Atsushi

AU - Miyao, Masanobu

PY - 2003/4/30

Y1 - 2003/4/30

M3 - 学術誌

SN - 0021-4922

VL - 42

SP - 1855

EP - 1858

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 1

ER -