Distribution of light elements in multicrystalline silicon for solar cells grown by directional solidification

Hitoshi Matsuo; Sho Hisamatsu; Yoshihiro Kangawa; Koichi Kakimoto

doi:10.1149/1.3155433

Distribution of light elements in multicrystalline silicon for solar cells grown by directional solidification

Hitoshi Matsuo, Sho Hisamatsu, Yoshihiro Kangawa, Koichi Kakimoto

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We investigated the relationship between the formation of small grains and the distribution of precipitates such as Si₃ N₄ and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si₃ N₄ precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of Si₃ N₄ precipitates. Therefore, precipitation of SiON before precipitation of Si₃ N₄ is a candidate in the formation of small grains.

Original language	English
Pages (from-to)	H711-H715
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	9
DOIs	https://doi.org/10.1149/1.3155433
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3155433

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abstract = "We investigated the relationship between the formation of small grains and the distribution of precipitates such as Si3 N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3 N4 precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of Si3 N4 precipitates. Therefore, precipitation of SiON before precipitation of Si3 N4 is a candidate in the formation of small grains.",

author = "Hitoshi Matsuo and Sho Hisamatsu and Yoshihiro Kangawa and Koichi Kakimoto",

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T1 - Distribution of light elements in multicrystalline silicon for solar cells grown by directional solidification

AU - Matsuo, Hitoshi

AU - Hisamatsu, Sho

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

PY - 2009

Y1 - 2009

N2 - We investigated the relationship between the formation of small grains and the distribution of precipitates such as Si3 N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3 N4 precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of Si3 N4 precipitates. Therefore, precipitation of SiON before precipitation of Si3 N4 is a candidate in the formation of small grains.

AB - We investigated the relationship between the formation of small grains and the distribution of precipitates such as Si3 N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3 N4 precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of Si3 N4 precipitates. Therefore, precipitation of SiON before precipitation of Si3 N4 is a candidate in the formation of small grains.

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 9

ER -

Distribution of light elements in multicrystalline silicon for solar cells grown by directional solidification

Abstract

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UN SDGs

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