TY - GEN
T1 - Dislocation constraint by etch-back process of seed crystal in sic bulk crystal growth
AU - Kato, Tomohisa
AU - Ovanagi, Naoki
AU - Kitou, Yasuo
AU - Nishizawa, Shin Ichi
AU - Arai, Kazuo
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Dislocation constraint in the growth of SiC crystal by the modified Lely method was studied. In SiC single crystal growth, the dislocations and defects generally propagate from the seed crystal surface. However, when the etch back on the seed crystal surface in the sublimation process was performed prior to growth, defects and dislocations propagation in the interface between the seed crystal and the grow'n crystal were reasonably suppressed. The switchover from the etch back to the growth could be performed without changing the heating condition during the initial process. We noticed that the density of the hollow defects called as micropipes in the grown crystal were decreased to 1/10 compared to that of the seed crystal used. We consider the etch back proccss of the seed crystal is an effective method for constraining the defects in the SiC crystal growth.
AB - Dislocation constraint in the growth of SiC crystal by the modified Lely method was studied. In SiC single crystal growth, the dislocations and defects generally propagate from the seed crystal surface. However, when the etch back on the seed crystal surface in the sublimation process was performed prior to growth, defects and dislocations propagation in the interface between the seed crystal and the grow'n crystal were reasonably suppressed. The switchover from the etch back to the growth could be performed without changing the heating condition during the initial process. We noticed that the density of the hollow defects called as micropipes in the grown crystal were decreased to 1/10 compared to that of the seed crystal used. We consider the etch back proccss of the seed crystal is an effective method for constraining the defects in the SiC crystal growth.
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U2 - 10.4028Avww.scientific.net/MSF.389-393.111
DO - 10.4028Avww.scientific.net/MSF.389-393.111
M3 - Conference contribution
AN - SCOPUS:34247218031
SN - 9780878498949
T3 - Materials Science Forum
SP - 111
EP - 114
BT - Silicon Carbide and Related Materials 2001
A2 - Yoshida, S.
A2 - Nishino, S.
A2 - Harima, H.
A2 - Kimoto, T.
PB - Trans Tech Publications Ltd
T2 - International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
Y2 - 28 October 2001 through 2 November 2001
ER -