Dislocation analysis of a new method for growing large-size crystals of monocrystalline silicon using a seed casting technique

A new method is proposed for growing large-size crystals of monocrystalline silicon using a seed casting technique. The stress and dislocation distributions for this type of growth during crystallization were simulated. The results indicate that the order of dislocation density is not very large. If the cooling flux of the crystal growth is controlled to be small at the initial stage, and the annihilation and direction effects of dislocation in the Alexander and Haasen model are included, the real dislocation density could be considerably smaller than the calculated value. Therefore, the new growth method for monocrystalline silicon is promising for complete single crystal growth, effectively avoids polycrystalline nucleation, and has a moderate dislocation density.