Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique

R. Bairava Ganesh; Hitoshi Matsuo; Yoshihiro Kangawa; Koji Arafune; Yoshio Ohshita; Masafumi Yamaguchi; Koichi Kakimoto

doi:10.1021/cg800160g

Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique

R. Bairava Ganesh, Hitoshi Matsuo, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Employing the accelerated crucible rotation technique, we grew multicrystalline silicon by the directional solidification process. The distribution of carbon concentration determined by Fourier transform infrared spectroscopy demonstrated that application of accelerated crucible rotation homogenized the carbon concentration in the grown ingot. Attempts were made to explain the effect of crucible rotation on homogenization of carbon concentration in terms of segregation phenomena. Moreover, growth striations induced by the crucible rotation were observed in the axial direction of the ingot.

Original language	English
Pages (from-to)	2525-2527
Number of pages	3
Journal	Crystal Growth and Design
Volume	8
Issue number	7
DOIs	https://doi.org/10.1021/cg800160g
Publication status	Published - Jul 2008

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1021/cg800160g

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AU - Ganesh, R. Bairava

AU - Matsuo, Hitoshi

AU - Kangawa, Yoshihiro

AU - Arafune, Koji

AU - Ohshita, Yoshio

AU - Yamaguchi, Masafumi

AU - Kakimoto, Koichi

PY - 2008/7

Y1 - 2008/7

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AB - Employing the accelerated crucible rotation technique, we grew multicrystalline silicon by the directional solidification process. The distribution of carbon concentration determined by Fourier transform infrared spectroscopy demonstrated that application of accelerated crucible rotation homogenized the carbon concentration in the grown ingot. Attempts were made to explain the effect of crucible rotation on homogenization of carbon concentration in terms of segregation phenomena. Moreover, growth striations induced by the crucible rotation were observed in the axial direction of the ingot.

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Directional solidification of multicrystalline silicon using the accelerated crucible rotation technique

Abstract

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