Direct crystallization and characterization of Bi₃TiTaO ₉ thin films prepared by metalorganic chemical vapor deposition

Bi₃TiTaO₉ (BTT) thin films were prepared on (111)Pt/Ti/SiO₂/Si substrate by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). BTT thin films deposited at 550°C were found to consist of a single phase of bismuth layer structure by X-ray diffraction (XRD). This temperature was lower than that reported in the data for obtaining single phase SrBi₂Ta ₂O₉ (SBT) thin films prepared by MOCVD. Furthermore, the reciprocal space mapping of BTT thin films showed the (103)-preferred orientation of this film, as well as the orientation of SBT thin films. The dielectric constant, er, and loss tangent, tan δ, of the BTT thin film were 180 and 3% at 1 MHz, respectively. An abrupt increase of the leakage current of this film was observed at about 280kV/cm.