Direct bonding of LiNbO3 and SiC wafers at room temperature

Ryo Takigawa; Jun Utsumi

doi:10.1016/j.scriptamat.2019.08.027

Direct bonding of LiNbO₃ and SiC wafers at room temperature

Ryo Takigawa, Jun Utsumi

Integrated Electronic Systems

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19 Citations (Scopus)

Abstract

Application of the surface activated bonding (SAB) method to direct bonding of LiNbO₃ and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO₃/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO₃/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements.

Original language	English
Pages (from-to)	58-61
Number of pages	4
Journal	Scripta Materialia
Volume	174
DOIs	https://doi.org/10.1016/j.scriptamat.2019.08.027
Publication status	Published - Jan 1 2020

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2019.08.027

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title = "Direct bonding of LiNbO3 and SiC wafers at room temperature",

abstract = "Application of the surface activated bonding (SAB) method to direct bonding of LiNbO3 and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO3/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO3/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements.",

author = "Ryo Takigawa and Jun Utsumi",

note = "Funding Information: This work was supported in part by a Kakenhi Grant-in-Aid (No. JP17H04925) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2019",

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doi = "10.1016/j.scriptamat.2019.08.027",

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AU - Takigawa, Ryo

AU - Utsumi, Jun

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N2 - Application of the surface activated bonding (SAB) method to direct bonding of LiNbO3 and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO3/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO3/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements.

AB - Application of the surface activated bonding (SAB) method to direct bonding of LiNbO3 and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO3/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO3/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements.

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ER -

Direct bonding of LiNbO₃ and SiC wafers at room temperature

Abstract

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