Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

Dong Wang; Sho Kamezawa; Keisuke Yamamoto; Hiroshi Nakashima

doi:10.1109/ISTDM.2014.6874642

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

Dong Wang, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

As a promising material for fabricating on-chip optoelectronic devices, germanium (Ge) has a direct band gap of 0.8 eV, which matches with the wavelength for optical communication. The energy difference is only 134 meV between direct and indirect band gaps, implying the possibility of a direct band gap light emission. In general, a p-i-n diode structure is used for a Ge photo emitter, of which fabrication process is relatively complicated and high-quality n-type doping is still an issue. Recently we achieved high Schottky barrier heights for electrons Φ_BN = 0.60 eV (HfGe/n-Ge) and holes Φ_BP = 0.57 eV (TiN/p-Ge) [1,2]. Based on this technology, we demonstrate direct band gap room temperature electroluminescence (EL) from bulk Ge using a fin-type asymmetric metel/Ge/metal (HfGe/Ge/TiN) structure.

Original language	English
Title of host publication	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Publisher	IEEE Computer Society
Pages	109-110
Number of pages	2
ISBN (Print)	9781479954285
DOIs	https://doi.org/10.1109/ISTDM.2014.6874642
Publication status	Published - 2014
Event	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore Duration: Jun 2 2014 → Jun 4 2014

Publication series

Name	2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other	7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Country/Territory	Singapore
City	Singapore
Period	6/2/14 → 6/4/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ISTDM.2014.6874642

Cite this

Wang, D., Kamezawa, S., Yamamoto, K., & Nakashima, H. (2014). Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 109-110). Article 6874642 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874642

Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. / Wang, Dong; Kamezawa, Sho; Yamamoto, Keisuke et al.
2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 109-110 6874642 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, D, Kamezawa, S, Yamamoto, K & Nakashima, H 2014, Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874642, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, IEEE Computer Society, pp. 109-110, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 6/2/14. https://doi.org/10.1109/ISTDM.2014.6874642

Wang D, Kamezawa S, Yamamoto K, Nakashima H. Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 109-110. 6874642. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). doi: 10.1109/ISTDM.2014.6874642

Wang, Dong ; Kamezawa, Sho ; Yamamoto, Keisuke et al. / Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 109-110 (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014).

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abstract = "As a promising material for fabricating on-chip optoelectronic devices, germanium (Ge) has a direct band gap of 0.8 eV, which matches with the wavelength for optical communication. The energy difference is only 134 meV between direct and indirect band gaps, implying the possibility of a direct band gap light emission. In general, a p-i-n diode structure is used for a Ge photo emitter, of which fabrication process is relatively complicated and high-quality n-type doping is still an issue. Recently we achieved high Schottky barrier heights for electrons ΦBN = 0.60 eV (HfGe/n-Ge) and holes ΦBP = 0.57 eV (TiN/p-Ge) [1,2]. Based on this technology, we demonstrate direct band gap room temperature electroluminescence (EL) from bulk Ge using a fin-type asymmetric metel/Ge/metal (HfGe/Ge/TiN) structure.",

author = "Dong Wang and Sho Kamezawa and Keisuke Yamamoto and Hiroshi Nakashima",

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AB - As a promising material for fabricating on-chip optoelectronic devices, germanium (Ge) has a direct band gap of 0.8 eV, which matches with the wavelength for optical communication. The energy difference is only 134 meV between direct and indirect band gaps, implying the possibility of a direct band gap light emission. In general, a p-i-n diode structure is used for a Ge photo emitter, of which fabrication process is relatively complicated and high-quality n-type doping is still an issue. Recently we achieved high Schottky barrier heights for electrons ΦBN = 0.60 eV (HfGe/n-Ge) and holes ΦBP = 0.57 eV (TiN/p-Ge) [1,2]. Based on this technology, we demonstrate direct band gap room temperature electroluminescence (EL) from bulk Ge using a fin-type asymmetric metel/Ge/metal (HfGe/Ge/TiN) structure.

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Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

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