Diffusion coefficient of interstitial iron in silicon

Takashi Isobe, Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journalArticlepeer-review

    42 Citations (Scopus)


    The in-depth profiles of iron in silicon diffused with iron at 800, 900, 1000 and 1070°C were investigated by DLTS measurements. The diffusion coefficient of interstitial iron in silicon was represented by the expression DFe=9.5×10-4 exp(-0.65/kT) cm2s-1 in the temperature range of 800-1070°C.

    Original languageEnglish
    Pages (from-to)1282-1283
    Number of pages2
    JournalJapanese journal of applied physics
    Issue number7 R
    Publication statusPublished - Jul 1989

    All Science Journal Classification (ASJC) codes

    • General Engineering
    • General Physics and Astronomy


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