Diffusion and trapping of tritium in vanadium alloys

J. Masuda, K. Hashizume, T. Otsuka, T. Tanabe, Y. Hatano, Y. Nakamura, T. Nagasaka, T. Muroga

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)


    Tritium diffusion in a vanadium alloy (V-4Cr-4Ti) has been investigated at temperatures ranging from 230 K to 573 K. Tritium was loaded into the surface layers of the alloy specimen with an ac-glow discharge. Before and after diffusion annealing of the specimen, tritium diffusion profiles were measured by means of an imaging plate (IP) technique. Tritium diffusion coefficients (DT), which were evaluated by fitting a numerical solution of the diffusion geometry employed here to the obtained diffusion profiles, were a little smaller than those for pure V with the activation energy of 0.13 ± 0.01 eV. Below 320 K, in addition, the Arrhenius plot of DT bent downwards showing a larger activation energy of 0.19 ± 0.01 eV, probably owing to the trapping effect of both of Cr and Ti. The effect of alloying elements on tritium diffusion and the influence of tritium release from the surface were discussed.

    Original languageEnglish
    Pages (from-to)1256-1260
    Number of pages5
    JournalJournal of Nuclear Materials
    Issue number1-3
    Publication statusPublished - Jun 15 2007

    All Science Journal Classification (ASJC) codes

    • Nuclear and High Energy Physics
    • General Materials Science
    • Nuclear Energy and Engineering


    Dive into the research topics of 'Diffusion and trapping of tritium in vanadium alloys'. Together they form a unique fingerprint.

    Cite this