Diffuse X-ray scattering study of sublattice ordering among group III atoms in In0.5Ga0.5P and In0.5Al0.5P

S. Yasuami; K. Koga; K. Ohshima; S. Sasaki; M. Ando

doi:10.1107/S0021889892002176

Diffuse X-ray scattering study of sublattice ordering among group III atoms in In_0.5Ga_0.5P and In_0.5Al_0.5P

S. Yasuami, K. Koga, K. Ohshima, S. Sasaki, M. Ando

Chemo-Pharmaceutical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The intensity of superstructure reflections and associated diffuse scattering from In_0.5Ga_0.5P and In_0.5Al_0.5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies.

Original language	English
Pages (from-to)	514-518
Number of pages	5
Journal	Journal of Applied Crystallography
Volume	25
Issue number	pt 4
DOIs	https://doi.org/10.1107/S0021889892002176
Publication status	Published - Aug 1 1992

All Science Journal Classification (ASJC) codes

Biochemistry, Genetics and Molecular Biology(all)

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abstract = "The intensity of superstructure reflections and associated diffuse scattering from In0.5Ga0.5P and In0.5Al0.5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies.",

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AU - Yasuami, S.

AU - Koga, K.

AU - Ohshima, K.

AU - Sasaki, S.

AU - Ando, M.

PY - 1992/8/1

Y1 - 1992/8/1

N2 - The intensity of superstructure reflections and associated diffuse scattering from In0.5Ga0.5P and In0.5Al0.5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies.

AB - The intensity of superstructure reflections and associated diffuse scattering from In0.5Ga0.5P and In0.5Al0.5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies.

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Diffuse X-ray scattering study of sublattice ordering among group III atoms in In_0.5Ga_0.5P and In_0.5Al_0.5P

Abstract

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