More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.
|Title of host publication
|Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - Jul 25 2016
|28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: Jun 12 2016 → Jun 16 2016
|Proceedings of the International Symposium on Power Semiconductor Devices and ICs
|28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
|6/12/16 → 6/16/16
All Science Journal Classification (ASJC) codes
- General Engineering