Diameter dependence of electron mobility in InGaAs nanowires

Jared J. Hou, Fengyun Wang, Ning Han, Haoshen Zhu, Kitwa Fok, Waichak Lam, Senpo Yip, Takfu Hung, Joshua E.Y. Lee, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


In this work, we present the diameter dependent electron mobility study of InGaAs nanowires (NWs) grown by gold-catalyzed vapor transport method. These single crystalline nanowires have an In-rich stoichiometry (i.e., In 0.7Ga0.3As) with dispersed diameters from 15 to 55 nm. The current-voltage behaviors of fabricated nanowire field-effect transistors reveal that the aggressive scaling of nanowire diameter will induce a degradation of electron mobility, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the impact of surface roughness scattering on the electron mobility. This work suggests a careful design consideration of nanowire dimension is required for achieving the optimal device performances.

Original languageEnglish
Article number093112
JournalApplied Physics Letters
Issue number9
Publication statusPublished - Mar 4 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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