Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells

Hiroshi Naragino; Yoshiya Nagata; Keigo Okafuji; Shinpei Ohtomo; Yuta Shimizu; Kensuke Honda

doi:10.1149/07513.0153ecst

Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells

Hiroshi Naragino, Yoshiya Nagata, Keigo Okafuji, Shinpei Ohtomo, Yuta Shimizu, Kensuke Honda

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

P-type boron-doped amorphous silicon and carbon alloy (B-doped a-Si_xC1-_x) thin films with wide optical gap selective from 1.80 to 2.50 eV were successfully deposited by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (CVD) method using a mixed solution of tetramethylsilane (TMS) and trimethylborate (TMOB) as a liquid source. Optical gaps of the B-doped a-Si_xC1-_x films could be controlled by changing Si/(C + Si) ratio of the film. From photo-electrochemical measurement under UV illumination, it was clarified that the B-doped a-Si_xC_1-x film with an optical gap of 2.50 eV has the p-type semiconducting property and photoelectric conversion function with a quantum yield of 1.63 %. The rectifying action of a p-n heterojunction comprising p-type B-doped a-Si_xC_1-x film and n-type Si (100) substrate was observed. The open circuit voltage (V_OC) and short circuit current density (J_SC) of the heterojunction were estimated to be 200 mV and 45 mA/cm², respectively. The results indicate that p-type B-doped a-Si_xC_1-x films with controllable optical gaps is a promising p-layer material for multi-junction solar cells.

Original language	English
Title of host publication	Emerging Nanomaterials and Devices
Editors	U. Schwalke, H. Baumgart, H. Hahn, F. Kreupl, M. C. Lemme, Q. Li, M. K. Orlowski, S. V. Rotkin
Publisher	Electrochemical Society Inc.
Pages	153-159
Number of pages	7
Edition	13
ISBN (Electronic)	9781607687306
DOIs	https://doi.org/10.1149/07513.0153ecst
Publication status	Published - 2016
Externally published	Yes
Event	Symposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: Oct 2 2016 → Oct 7 2016

Publication series

Name	ECS Transactions
Number	13
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	10/2/16 → 10/7/16

All Science Journal Classification (ASJC) codes

General Engineering

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10.1149/07513.0153ecst

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Naragino, H., Nagata, Y., Okafuji, K., Ohtomo, S., Shimizu, Y., & Honda, K. (2016). Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells. In U. Schwalke, H. Baumgart, H. Hahn, F. Kreupl, M. C. Lemme, Q. Li, M. K. Orlowski, & S. V. Rotkin (Eds.), Emerging Nanomaterials and Devices (13 ed., pp. 153-159). (ECS Transactions; Vol. 75, No. 13). Electrochemical Society Inc.. https://doi.org/10.1149/07513.0153ecst

Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells. / Naragino, Hiroshi; Nagata, Yoshiya; Okafuji, Keigo et al.
Emerging Nanomaterials and Devices. ed. / U. Schwalke; H. Baumgart; H. Hahn; F. Kreupl; M. C. Lemme; Q. Li; M. K. Orlowski; S. V. Rotkin. 13. ed. Electrochemical Society Inc., 2016. p. 153-159 (ECS Transactions; Vol. 75, No. 13).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Naragino, H, Nagata, Y, Okafuji, K, Ohtomo, S, Shimizu, Y & Honda, K 2016, Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells. in U Schwalke, H Baumgart, H Hahn, F Kreupl, MC Lemme, Q Li, MK Orlowski & SV Rotkin (eds), Emerging Nanomaterials and Devices. 13 edn, ECS Transactions, no. 13, vol. 75, Electrochemical Society Inc., pp. 153-159, Symposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07513.0153ecst

Naragino H, Nagata Y, Okafuji K, Ohtomo S, Shimizu Y, Honda K. Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells. In Schwalke U, Baumgart H, Hahn H, Kreupl F, Lemme MC, Li Q, Orlowski MK, Rotkin SV, editors, Emerging Nanomaterials and Devices. 13 ed. Electrochemical Society Inc. 2016. p. 153-159. (ECS Transactions; 13). doi: 10.1149/07513.0153ecst

Naragino, Hiroshi ; Nagata, Yoshiya ; Okafuji, Keigo et al. / Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells. Emerging Nanomaterials and Devices. editor / U. Schwalke ; H. Baumgart ; H. Hahn ; F. Kreupl ; M. C. Lemme ; Q. Li ; M. K. Orlowski ; S. V. Rotkin. 13. ed. Electrochemical Society Inc., 2016. pp. 153-159 (ECS Transactions; 13).

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abstract = "P-type boron-doped amorphous silicon and carbon alloy (B-doped a-SixC1-x) thin films with wide optical gap selective from 1.80 to 2.50 eV were successfully deposited by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (CVD) method using a mixed solution of tetramethylsilane (TMS) and trimethylborate (TMOB) as a liquid source. Optical gaps of the B-doped a-SixC1-x films could be controlled by changing Si/(C + Si) ratio of the film. From photo-electrochemical measurement under UV illumination, it was clarified that the B-doped a-SixC1-x film with an optical gap of 2.50 eV has the p-type semiconducting property and photoelectric conversion function with a quantum yield of 1.63 %. The rectifying action of a p-n heterojunction comprising p-type B-doped a-SixC1-x film and n-type Si (100) substrate was observed. The open circuit voltage (VOC) and short circuit current density (JSC) of the heterojunction were estimated to be 200 mV and 45 mA/cm2, respectively. The results indicate that p-type B-doped a-SixC1-x films with controllable optical gaps is a promising p-layer material for multi-junction solar cells.",

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AB - P-type boron-doped amorphous silicon and carbon alloy (B-doped a-SixC1-x) thin films with wide optical gap selective from 1.80 to 2.50 eV were successfully deposited by radio frequency (r.f.) plasma-enhanced chemical vapor deposition (CVD) method using a mixed solution of tetramethylsilane (TMS) and trimethylborate (TMOB) as a liquid source. Optical gaps of the B-doped a-SixC1-x films could be controlled by changing Si/(C + Si) ratio of the film. From photo-electrochemical measurement under UV illumination, it was clarified that the B-doped a-SixC1-x film with an optical gap of 2.50 eV has the p-type semiconducting property and photoelectric conversion function with a quantum yield of 1.63 %. The rectifying action of a p-n heterojunction comprising p-type B-doped a-SixC1-x film and n-type Si (100) substrate was observed. The open circuit voltage (VOC) and short circuit current density (JSC) of the heterojunction were estimated to be 200 mV and 45 mA/cm2, respectively. The results indicate that p-type B-doped a-SixC1-x films with controllable optical gaps is a promising p-layer material for multi-junction solar cells.

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Development of silicon and carbon based p-type amorphous semiconductor films with optical gap variable for high-efficiency multi-junction solar cells

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