Development of resistance welding for silicon carbide

K. Hamasuna, C. Iwamoto, S. Satonaka, M. Nishida, R. Tomoshige, M. Fujita

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Resistance welding was applied to the bonding of SiC to metals. The welded interface structure was observed by high-resolution transmission electron microscopy to reveal the reaction during welding. The maximum bonding temperature of SiC varied with the rate of welding current rise. At the welded interface, Al4C3, Al and an amorphous phase were formed adjacent to SiC in the SiC/Al system. The SiC/Al interface was flat at the atomic level and the crystallographic orientation relationship between SiC and Al was observed. For the SiC/Ag-Cu-Ti alloy system, the reaction phases TiC and Ti5Si3 were formed at the interface. The thickness of the reaction phases varied with the rate of welding current rise, and, under specific welding conditions, Ag formed directly adjacent to SiC without the reaction phases.

Original languageEnglish
Pages (from-to)1060-1063
Number of pages4
JournalMaterials Transactions
Issue number5
Publication statusPublished - May 2007

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Development of resistance welding for silicon carbide'. Together they form a unique fingerprint.

Cite this