Development of new oxygen sensor by microfabrication of single-crystal CuFeTe2 thin films

Masatoshi Kozaki; Yuichiro Higuchi; Akihiro Ikeda; Hisao Kuriyaki; Kiyoshi Toko

Development of new oxygen sensor by microfabrication of single-crystal CuFeTe₂ thin films

Masatoshi Kozaki, Yuichiro Higuchi, Akihiro Ikeda, Hisao Kuriyaki, Kiyoshi Toko

Research output: Contribution to journal › Article › peer-review

Abstract

A new oxygen sensor based on resistance change caused by oxygen intercalation for the layered compound CuFeTe₂ (CFT) was developed. A microfabrication process for forming many fine pores on the surface of single-crystal CFT thin films by performing wet etching using photolithography was developed with the aim of reducing the response time of the oxygen sensor. A reproducible response of the fabricated samples to oxygen gas was confirmed when 20% oxygen gas and nitrogen gas were alternately introduced into the sample chamber. The microfabricated sample of the single-crystal CFT thin films showed a response time of 2.5 min to 20% oxygen gas, approximately 34% of that of the single-crystal CFT thin films without fine pores.

Original language	English
Pages (from-to)	471-477
Number of pages	7
Journal	Sensors and Materials
Volume	25
Issue number	7
Publication status	Published - Oct 21 2013

All Science Journal Classification (ASJC) codes

Instrumentation
Materials Science(all)

Cite this

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title = "Development of new oxygen sensor by microfabrication of single-crystal CuFeTe2 thin films",

abstract = "A new oxygen sensor based on resistance change caused by oxygen intercalation for the layered compound CuFeTe2 (CFT) was developed. A microfabrication process for forming many fine pores on the surface of single-crystal CFT thin films by performing wet etching using photolithography was developed with the aim of reducing the response time of the oxygen sensor. A reproducible response of the fabricated samples to oxygen gas was confirmed when 20% oxygen gas and nitrogen gas were alternately introduced into the sample chamber. The microfabricated sample of the single-crystal CFT thin films showed a response time of 2.5 min to 20% oxygen gas, approximately 34% of that of the single-crystal CFT thin films without fine pores.",

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AU - Kozaki, Masatoshi

AU - Higuchi, Yuichiro

AU - Ikeda, Akihiro

AU - Kuriyaki, Hisao

AU - Toko, Kiyoshi

PY - 2013/10/21

Y1 - 2013/10/21

N2 - A new oxygen sensor based on resistance change caused by oxygen intercalation for the layered compound CuFeTe2 (CFT) was developed. A microfabrication process for forming many fine pores on the surface of single-crystal CFT thin films by performing wet etching using photolithography was developed with the aim of reducing the response time of the oxygen sensor. A reproducible response of the fabricated samples to oxygen gas was confirmed when 20% oxygen gas and nitrogen gas were alternately introduced into the sample chamber. The microfabricated sample of the single-crystal CFT thin films showed a response time of 2.5 min to 20% oxygen gas, approximately 34% of that of the single-crystal CFT thin films without fine pores.

AB - A new oxygen sensor based on resistance change caused by oxygen intercalation for the layered compound CuFeTe2 (CFT) was developed. A microfabrication process for forming many fine pores on the surface of single-crystal CFT thin films by performing wet etching using photolithography was developed with the aim of reducing the response time of the oxygen sensor. A reproducible response of the fabricated samples to oxygen gas was confirmed when 20% oxygen gas and nitrogen gas were alternately introduced into the sample chamber. The microfabricated sample of the single-crystal CFT thin films showed a response time of 2.5 min to 20% oxygen gas, approximately 34% of that of the single-crystal CFT thin films without fine pores.

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ER -

Development of new oxygen sensor by microfabrication of single-crystal CuFeTe₂ thin films

Abstract

All Science Journal Classification (ASJC) codes

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