TY - JOUR
T1 - Development of n-in-p silicon planar pixel sensors and flip-chip modules for very high radiation environments
AU - Unno, Y.
AU - Ikegami, Y.
AU - Terada, S.
AU - Mitsui, S.
AU - Jinnouchi, O.
AU - Kamada, S.
AU - Yamamura, K.
AU - Ishida, A.
AU - Ishihara, M.
AU - Inuzuka, T.
AU - Hanagaki, K.
AU - Hara, K.
AU - Kondo, T.
AU - Kimura, N.
AU - Nakano, I.
AU - Nagai, K.
AU - Takashima, R.
AU - Tojo, J.
AU - Yorita, K.
N1 - Funding Information:
This research was partially supported by the Grant-in-Aid for Scientific Research (A) (Grant no. 20244038 ) and Research (C) (Grant no. 20540291 ) by Japan Society for the Promotion of Science and the Grant-in-Aid for Scientific Research on Priority Area (Grant no. 20025007 ) by the Japanese Ministry of Education, Culture, Sports, Science and Technology.
PY - 2011/9/11
Y1 - 2011/9/11
N2 - In this paper we present R&D of n-in-p pixel sensors, aiming for a very high radiation environment up to a fluence of 1016 n eq/cm2. To fabricate these sensors, two batches with different mask sets were employed: the first resulted in pixel sensors compatible with the ATLAS pixel readout frontend chip called FE-I3, and the second in FE-I3 and a new frontend chip, FE-I4, compatible sensors; small diodes were employed to investigate the width from the active diode to the dicing edge and the guard rings. Tests involving the diodes showed that the strong increase of leakage current was attributed to the edge current when the lateral depletion zone reaches the dicing edge and the lateral depletion along the silicon surface was correlated with the 'field' width. The onset was observed at a voltage of 1000 V when the width was equal to ∼400 μm. The pixel sensors that were diced at a width of 450 μm could successfully maintain a bias voltage of 1000 V. Hybrid flip-chip pixel modules with dummy and real chips were also fabricated. Lead (PbSn) solder bump bonding proved to be successful. However, lead-free (SnAg) solder bump bonding requires further optimization.
AB - In this paper we present R&D of n-in-p pixel sensors, aiming for a very high radiation environment up to a fluence of 1016 n eq/cm2. To fabricate these sensors, two batches with different mask sets were employed: the first resulted in pixel sensors compatible with the ATLAS pixel readout frontend chip called FE-I3, and the second in FE-I3 and a new frontend chip, FE-I4, compatible sensors; small diodes were employed to investigate the width from the active diode to the dicing edge and the guard rings. Tests involving the diodes showed that the strong increase of leakage current was attributed to the edge current when the lateral depletion zone reaches the dicing edge and the lateral depletion along the silicon surface was correlated with the 'field' width. The onset was observed at a voltage of 1000 V when the width was equal to ∼400 μm. The pixel sensors that were diced at a width of 450 μm could successfully maintain a bias voltage of 1000 V. Hybrid flip-chip pixel modules with dummy and real chips were also fabricated. Lead (PbSn) solder bump bonding proved to be successful. However, lead-free (SnAg) solder bump bonding requires further optimization.
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U2 - 10.1016/j.nima.2010.12.191
DO - 10.1016/j.nima.2010.12.191
M3 - Article
AN - SCOPUS:80052252577
SN - 0168-9002
VL - 650
SP - 129
EP - 135
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
IS - 1
ER -