TY - GEN
T1 - Development of high-resolution and light-weight x-ray optics with deformed silicon wafers
AU - Ezoe, Yuichiro
AU - Shirata, Takayuki
AU - Ohashi, Takaya
AU - Ishida, Manabu
AU - Mitsuda, Kazuhisa
AU - Fujiwara, Kozo
AU - Morishita, Kohei
AU - Nakajima, Kazuo
PY - 2009
Y1 - 2009
N2 - We report on our development of hot plastic deformation of silicon wafer for high-resolution and light-weight X-ray optics. The highly polished silicon wafer with an excellent flat surface is a promising candidate for the next generation space X-ray telescopes. Deformation accuracy and stability, especially if elastic deformation is used, are issues. The hot plastic deformation of the silicon wafer allows us 3-dimensional shaping without spring back after the deformation. As a first step of R & D, we conducted the hot plastic deformation of 4-inch silicon (111) wafers with a thickness of 300 μm by using hemispherical dies with a curvature radius of 1000 mm. The deformed wafer kept good surface quality but showed a slightly large curvature of 1030 mm. We measured the X-ray reflectivity of the deformed wafer at Al K α 1.49 keV. For the first time, we detected the total X-ray reflection on the deformed wafer. Estimated rms surface roughness was 0-1 nm and no significant degradation from the bare silicon wafers was seen.
AB - We report on our development of hot plastic deformation of silicon wafer for high-resolution and light-weight X-ray optics. The highly polished silicon wafer with an excellent flat surface is a promising candidate for the next generation space X-ray telescopes. Deformation accuracy and stability, especially if elastic deformation is used, are issues. The hot plastic deformation of the silicon wafer allows us 3-dimensional shaping without spring back after the deformation. As a first step of R & D, we conducted the hot plastic deformation of 4-inch silicon (111) wafers with a thickness of 300 μm by using hemispherical dies with a curvature radius of 1000 mm. The deformed wafer kept good surface quality but showed a slightly large curvature of 1030 mm. We measured the X-ray reflectivity of the deformed wafer at Al K α 1.49 keV. For the first time, we detected the total X-ray reflection on the deformed wafer. Estimated rms surface roughness was 0-1 nm and no significant degradation from the bare silicon wafers was seen.
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U2 - 10.1117/12.823932
DO - 10.1117/12.823932
M3 - Conference contribution
AN - SCOPUS:67749123007
SN - 9780819476340
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - EUV and X-Ray Optics
T2 - EUV and X-Ray Optics: Synergy between Laboratory and Space
Y2 - 20 April 2009 through 22 April 2009
ER -