TY - GEN
T1 - Development of ferromagnetic oxide semiconductor thin films towards spintronics applications
AU - Fujita, K.
AU - Hojo, H.
AU - Matoba, T.
AU - Hirao, K.
AU - Tanaka, K.
PY - 2008
Y1 - 2008
N2 - Epitaxial thin films of ilmenite-hematite solid solutions with compositions of xFeTiO3-(l - x)Fe2O3 (x=0.8, 0.7, and 0.6) (in molar ratio) have been grown on α-Al2O3 (0001) substrates utilizing a pulsed laser deposition (PLD) technique, and their electrical and magnetic properties have been examined. By precisely controlling the deposition conditions such as oxygen partial pressure and substrate temperature, a single phase of well-ordered solid solutions can be obtained irrespective of the compositions. The ordered-phase thin films show ferrimagnetic properties, and the Curie temperature (Tc) is 270, 400, and over 400 K at the compositions of x=0.S, 0.7, and 0.6, respectively. The ordered-phase thin films are also semiconducting, while the conduction type changes from p- to n-types as x is decreased from 0.8 to 0.6. The Hall effect measurements at room temperature suggest the spin polarization of charged carriers.
AB - Epitaxial thin films of ilmenite-hematite solid solutions with compositions of xFeTiO3-(l - x)Fe2O3 (x=0.8, 0.7, and 0.6) (in molar ratio) have been grown on α-Al2O3 (0001) substrates utilizing a pulsed laser deposition (PLD) technique, and their electrical and magnetic properties have been examined. By precisely controlling the deposition conditions such as oxygen partial pressure and substrate temperature, a single phase of well-ordered solid solutions can be obtained irrespective of the compositions. The ordered-phase thin films show ferrimagnetic properties, and the Curie temperature (Tc) is 270, 400, and over 400 K at the compositions of x=0.S, 0.7, and 0.6, respectively. The ordered-phase thin films are also semiconducting, while the conduction type changes from p- to n-types as x is decreased from 0.8 to 0.6. The Hall effect measurements at room temperature suggest the spin polarization of charged carriers.
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M3 - Conference contribution
AN - SCOPUS:63749098530
SN - 9781605606217
T3 - Materials Science and Technology Conference and Exhibition, MS and T'08
SP - 134
EP - 143
BT - Materials Science and Technology Conference and Exhibition MS and T'08
T2 - Materials Science and Technology Conference and Exhibition, MS and T'08
Y2 - 5 October 2008 through 9 October 2008
ER -