TY - GEN
T1 - Development of 600V-class trench filling SJ-MOSFET with SSRM analysis technology
AU - Ono, Syotaro
AU - Zhang, Li
AU - Ohta, Hiroshi
AU - Watanabe, Miho
AU - Saito, Wataru
AU - Sato, Shingo
AU - Sugaya, Hiroyuki
AU - Yamaguchi, Masakazu
PY - 2009/12/1
Y1 - 2009/12/1
N2 - 600V-class superjunction (SJ)-MOSFETs were developed using our original high-resolution Scanning Spread Resistance Microscopy (SSRM) analysis technology [1] for optimization of trench filling process for the first time. The SSRM analysis is a powerful tool for the SJ structure design, because it can be achieved the measurement of two- dimensional (2D)-carrier profile and detect of minute voids. The measured profile was applicable for device simulation of the SJ-Diode and the estimated breakdown voltage was in good agreement with the experimental values. By the feed back of these results to the trench filling process, the breakdown voltage was increased and the trade-off characteristics between the breakdown voltage and the specific on-resistance were achieved to 685V/16.5mΩcm2 in the fabricated SJ-MOSFET.
AB - 600V-class superjunction (SJ)-MOSFETs were developed using our original high-resolution Scanning Spread Resistance Microscopy (SSRM) analysis technology [1] for optimization of trench filling process for the first time. The SSRM analysis is a powerful tool for the SJ structure design, because it can be achieved the measurement of two- dimensional (2D)-carrier profile and detect of minute voids. The measured profile was applicable for device simulation of the SJ-Diode and the estimated breakdown voltage was in good agreement with the experimental values. By the feed back of these results to the trench filling process, the breakdown voltage was increased and the trade-off characteristics between the breakdown voltage and the specific on-resistance were achieved to 685V/16.5mΩcm2 in the fabricated SJ-MOSFET.
UR - http://www.scopus.com/inward/record.url?scp=77950010230&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950010230&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2009.5158062
DO - 10.1109/ISPSD.2009.5158062
M3 - Conference contribution
AN - SCOPUS:77950010230
SN - 9781424446735
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 303
EP - 306
BT - ISPSD '09 - Proceedings of the 21st International Symposium on Power Semiconductor Devices and IC's
T2 - 21st International Symposium on Power Semiconductor Devices and IC's, ISPSD '09
Y2 - 14 June 2009 through 18 June 2009
ER -