TY - GEN
T1 - Development and progress in thin film Si photovoltaic technologies
AU - Yoshida, I.
AU - Matsui, T.
AU - Sai, H.
AU - Suezaki, T.
AU - Nakao, S.
AU - Maejima, K.
AU - Katayama, H.
AU - Matsumoto, M.
AU - Sugiyama, S.
AU - Takeuchi, Y.
AU - Ushijima, M.
AU - Saito, K.
AU - Kondo, M.
AU - Tanaka, M.
AU - Nonomura, S.
AU - Shiratani, M.
AU - Konagai, M.
AU - Hirayama, M.
AU - Niki, S.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Photovoltaic Power Generation Technology Research Association (PVTEC) has organized the consortium of one national research institute and five private companies, which has been supported technically by three universities. It has developed thin film Si PV technologies of improving conversion efficiency and developing a high-productivity Si deposition apparatus. For improving the conversion efficiency, the stabilized efficiency of 10.1% for an a-Si:H cell, 11.0% for a μc-Si cell, and 12.2% with light induced degradation ratio of less than 3% have been achieved, respectively. We have also successfully developed a plasma-enhanced chemical vapor deposition (PECVD) machine, which can deposit high-quality μc-Si films uniformly on a large-scale substrate with high deposition-rate by using very high frequency (VHF) plasma.
AB - Photovoltaic Power Generation Technology Research Association (PVTEC) has organized the consortium of one national research institute and five private companies, which has been supported technically by three universities. It has developed thin film Si PV technologies of improving conversion efficiency and developing a high-productivity Si deposition apparatus. For improving the conversion efficiency, the stabilized efficiency of 10.1% for an a-Si:H cell, 11.0% for a μc-Si cell, and 12.2% with light induced degradation ratio of less than 3% have been achieved, respectively. We have also successfully developed a plasma-enhanced chemical vapor deposition (PECVD) machine, which can deposit high-quality μc-Si films uniformly on a large-scale substrate with high deposition-rate by using very high frequency (VHF) plasma.
UR - http://www.scopus.com/inward/record.url?scp=84912124750&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912124750&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925520
DO - 10.1109/PVSC.2014.6925520
M3 - Conference contribution
AN - SCOPUS:84912124750
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 2832
EP - 2835
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -
