Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics

Wataru Saito; Masahiko Kuraguchi; Yoshiharu Takada; Kunio Tsuda; Ichiro Omura; Tsuneo Ogura

doi:10.1109/TED.2004.841338

Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R_ONA-V_B tradeoff characteristics

Wataru Saito, Masahiko Kuraguchi, Yoshiharu Takada, Kunio Tsuda, Ichiro Omura, Tsuneo Ogura

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

High breakdown voltage AlGaN-GaN power high-electron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 mΩ · cm² for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.

Original language	English
Pages (from-to)	106-111
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	1
DOIs	https://doi.org/10.1109/TED.2004.841338
Publication status	Published - Jan 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2004.841338

Cite this

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title = "Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics",

abstract = "High breakdown voltage AlGaN-GaN power high-electron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 mΩ · cm2 for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.",

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T1 - Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for RONA-VB tradeoff characteristics

AU - Saito, Wataru

AU - Kuraguchi, Masahiko

AU - Takada, Yoshiharu

AU - Tsuda, Kunio

AU - Omura, Ichiro

AU - Ogura, Tsuneo

PY - 2005/1

Y1 - 2005/1

N2 - High breakdown voltage AlGaN-GaN power high-electron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 mΩ · cm2 for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.

AB - High breakdown voltage AlGaN-GaN power high-electron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics between the on-resistance and the breakdown voltage can be improved by the optimization of the above design parameters, and the on-resistance can be estimated to be about 0.6 mΩ · cm2 for the breakdown voltage of 600 V. This on-resistance is almost the same as that for the device on a conductive substrate.

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Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R_ONA-V_B tradeoff characteristics

Abstract

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